Manufacturing method of light-emitting device

ABSTRACT

The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.

This application is a divisional of U.S. application Ser. No.10/664,642, filed on Sep. 19, 2003 now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a fabrication system having a filmformation system for depositing materials which can be deposited byvapor deposition (hereinafter, an evaporation material), a lightemitting device which has a film containing an organic compound as alight emitting layer and for which the fabrication system is used, and amanufacturing method thereof. Specifically, the present inventionrelates to a film formation method (a vapor deposition method) forforming a film by vaporizing an evaporation material from a plurality ofevaporation sources provided to be opposite to a substrate and afabrication system.

2. Description of the Related Art

In recent years, research related to a light emitting apparatus havingan EL device as a self-luminous light emitting device has beenactivated. The light emitting apparatus is referred to as an organic ELdisplay or an organic light emitting diode. Since these light emittingapparatuses have characteristics such as rapid response speed that issuitable for a moving picture display, low voltage, low powerconsumption driving, they attracts an attention for next generationdisplays including new generation's mobile phones and portableinformation terminals (PDA).

An EL device has a layer containing an organic compound as a lightemitting layer. The EL device has a structure in which a layercontaining an organic compound (hereinafter, referred to as an EL layer)is sandwiched between an anode and a cathode. Electro luminescence isgenerated in the EL layer by applying an electronic field to the anodeand the cathode. Luminescence obtained from the EL device includesluminescence generated in returning to a base state from singlet excitedstate (fluorescence) and luminescence generated in returning to a basestate from triplet excited state (phosphorescence).

The EL layer has a laminated structure typified “a hole transportinglayer, a light emitting layer and an electron transporting layer.” ELmaterials for forming an EL layer are classified broadly intolow-molecular (monomer) materials and high-molecular (polymer)materials. The low-molecular materials are deposited using a vapordeposition system.

A conventional vapor deposition system has a substrate holder where asubstrate is set, a crucible encapsulating an EL material, in otherwords, an evaporation material, a shutter to prevent the EL material tobe sublimed from rising, and a heater for heating the EL material in acrucible. Then, the EL material heated by the heater is sublimed anddeposited on a rolling substrate. At this time, in order to deposituniformly, the distance between the substrate and the crucible needs tobe 1 m or more.

According to a conventional vapor deposition system and a conventionalvapor deposition method, when an EL layer is formed by vapor deposition,almost all the sublimated EL material is adhered to an inner wall, ashutter or an adherence preventive shield (a protective plate forpreventing an evaporation material from adhering to an inner wall of afilm formation chamber) at inside of the film formation chamber of thevapor deposition system. Therefore, in forming the EL layer, anefficiency of utilizing the expensive EL materials is extremely low i.e.about 1% or less and manufacturing cost of a light emitting apparatusbecomes very high.

Further, according to a conventional vapor deposition system, in orderto provide a uniform film, it is necessary to separate a substrate froman evaporation source at an interval equal to 1 m or more. Therefore,the vapor deposition system per se grows in size, a period required forexhausting each film formation chamber of the vapor deposition system isprolonged and therefore, film formation speed is slowed down andthroughput is lowered. Also, in using a large area substrate, it may bea problem that the film thickness between a center portion and amarginal portion of a substrate is uneven. Further, the vapor depositionsystem has a structure for rotating a substrate and therefore, there isa limit in the vapor deposition system aiming at a large area substrate.

In view of the above-described problems, the present inventors haveproposed a vapor deposition system (Reference 1. Japanese PatentLaid-Open No. 2001-247959 and Reference 2. Japanese Patent Laid-Open No.2002-60926).

SUMMARY OF THE INVENTION

Hence, the present invention provides a vapor deposition system offabrication systems that promotes an efficiency of utilizing an ELmaterial to reduce manufacturing costs and is excellent in uniformity orthroughput of forming an EL layer and a vapor deposition method.Further, the present invention provides a light emitting apparatusfabricated by the vapor deposition system and the vapor depositionmethod according to the present invention and a manufacturing method ofthe light emitting apparatus.

Further, the invention provides a fabrication system forvapor-depositing an EL material efficiently on a large area substratehaving a size of, for example, 320 mm×400 mm, 370 mm×470 mm, 550 mm×650mm, 600 mm×720 mm, 680 mm×880 mm, 1000 mm×1200 mm, 1100 mm×1250 mm or1150 mm×1300 mm. Also, the present invention provides a vapor depositionsystem that makes a whole surface of a large area substrate uniform witheven thickness.

In view of the foregoing, it is an object of the present invention toprovide a vapor deposition system wherein a substrate and an evaporationsource are moved relatively. In particular, it is an object of thepresent invention to provide a vapor deposition system wherein anevaporation source holder in which a container (crucible) that is filledwith an evaporation material in a sealed manner is set moves at acertain pitch with respect to the substrate in a film formation chamber.In this specification, a fabrication system that includes a vapordeposition system having a moving evaporation source holder is referredto as a moving cell cluster method.

In the present invention, the top face form of one evaporation sourceholder is rectangular and four or more crucibles, preferably, six oreight crucibles are installed side by side in the longitudinal directionof the evaporation source holder. It is noted that the term“rectangular” includes more elongated rectangular, elongated ellipse orlinear form. The length of the longitudinal direction of the evaporationsource holder is set as necessary within 300 mm to 1300 mm depending ona substrate to be used and crucibles are installed at even intervals. Inaddition, when the length of the longitudinal direction of theevaporation source holder is shorter than one side of the substrate tobe used, scanning is performed several times to form a film on thesubstrate. Further, the evaporation source holder can be movedrepeatedly in the one path to laminate one type of thin film severaltimes.

Four or more crucibles of which evaporation centers are each crossed areinstalled and heated simultaneously, and thus evaporation materials arecollide to each other for fine grains. At the time, the point at whichthe evaporation centers are crossed exists in the interspace between amask (a substrate) and a container.

One organic material or one type of organic material is not alwaysrequired to be held in an evaporation source holder, but plural types ofan organic compound can be held therein.

Further, in addition to one type of material provided as a lightemitting organic compound in an evaporation source holder, a differentorganic compound capable of serving as a dopant (dopant material) mayalso be provided together. It is preferable that an organic compoundlayer be formed by vapor deposition of a host material and a lightemitting material (dopant material) having lower excitation energy thanthat of the host material. It is also preferable that the excitationenergy of the dopant be lower than those of a hole transporting regionand an electron transporting layer. The dopant can thus be made toeffectively emit light while diffusion of the molecular excitons of thedopant is prevented. Further, the carrier recombination efficiency canalso be increased, provided that the dopant is a carrier trappingmaterial. Furthermore, a case in which a material is added into a mixedregion as a dopant which is capable of converting triplet excitationenergy into luminescence also falls under the scope of the presentinvention.

Further, a region where evaporation materials are mixed (mixed region)on an interface between each film of an EL layer having a laminatedstructure can be formed by filling different materials in pluralcrucibles and depositing them simultaneously. A concentration gradientmay also be provided in the mixed region.

In addition, in case a plurality of organic compound materials areprovided in one evaporation source holder, it is preferable thatevaporation directions of the organic compound materials be tilted sothat the organic compound materials can be crossed at the position ofsubstrate and be mixed. Evaporation directions may be set by tilting acontainer (crucible) using a tilt regulating screw.

In an evaporation source holder, there is provided a mechanism(typically two-axis stage) in which the evaporation source holder canmove in an X-direction or a Y-direction with keeping a horizontalposition in a film formation chamber. Here, an evaporation source holderis moved on a two-dimensional surface in the X-direction and theY-direction. A moving pitch of an evaporation source holder may beappropriately adjusted to the size of an opening portion of a mask. Afilm thickness monitor is moved together with the evaporation sourceholder. The film thickness is uniformed by regulating a movement speedof the evaporation source holder according to the value measured by thefilm thickness monitor. The angle between the longitudinal direction andthe movement direction of the evaporation source holder is 90 degrees.

In the vapor deposition system according to the present invention, aninterval distance d between the substrate and the evaporation sourceholder during vapor deposition is typically narrowed to equal to or lessthan 30 cm, preferably equal to or less than 20 cm, more preferably from5 cm to 15 cm. The utilization efficiency of evaporation materials aswell as throughput is thus markedly improved.

A deposition mask is likely to be heated since the interval distance dbetween the substrate and the evaporation source holder is narrowedtypically to not more than 30 cm. Therefore, it is preferable that thedeposition mask is made from a metal material having low coefficient ofthermal expansion, for example, high-melting point metals such astungsten, tantalum, chrome, nickel, molybdenum, or an alloy containingthese elements such as stainless, Inconel, or Hastelloy. For example, alow thermal expansion alloy containing nickel 42% and iron 58% can alsobe used. For cooling the heated deposition mask, a mechanism forcirculating a cooling medium, for example, cooling water, cooling gas,or the like, can be provided for the deposition mask. According to thepresent invention, since a deposition mask is moved, it is possible thatinferior deposition caused by deformation of masks due to heat can beminimized if the movement speed of the deposition mask is high.

There is provided a substrate holding means(frame) for supporting asubstrate so that, when multiface cutting (forming a plurality of panelsfrom one sheet of substrate) by using a large area substrate, portionsfor constituting scribe lines later are brought into contact therewith.That is, the substrate and a mask are set on the substrate holding meansand vapor deposition is carried out to regions which is not brought intocontact with the substrate holding means and which is not covered withthe mask by sublimating evaporation material from the evaporation sourceholder provided on a lower side of the substrate holding means. Thereby,bending of the large area substrate and the mask because of their ownweights can be restrained to be equal to or less than 1 mm. When themask or a inner wall of a chamber is cleaned, the substrate holdingmeans is made from conductive materials and a plasma is generated by ahigh frequency power source connected with the substrate holding meansto remove evaporation materials which are adhered to the mask or theinner wall of the chamber.

It is preferable that deposits attached to a mask be vaporized to beexhausted to outside of a film formation chamber for cleaning thedeposits attached to the mask by generating plasma in the film formationchamber by a plasma generating means as shown in FIG. 4A. Therefore afilm formation chamber has a gas introducing means for introducing oneor plural types of gas selected from the group consisting of Ar, H, F,NF₃, or O, and an exhausting means for exhausting vaporized deposits. Inaddition, electrodes are provided for a mask separately, and a highfrequency power source is connected to either thereof. Accordingly, themask is preferable to be made from a conductive material. A filmformation chamber can be cleaned without exposing the film formationchamber to air when maintenance is conducted by adopting above describedstructure. It is preferable that both a plasma cleaning means forcleaning only a mask simply and a plasma cleaning means for cleaningstrongly whole chamber are equipped with the film formation chamber.

In the above-described described vapor deposition system, an evaporationsource holders comprises a container 801 (typically a crucible), aheater that is set outside of the container via a soaking member, a heatinsulating layer that is set outside of the heater, an outer casing thatis storing these (exterior frame 802), a cooling pipe that is roundedaround the outside or inside of the outer casing (pipe for cooling water810), an evaporation shutter that opens and closes an opening portion ofthe outer casing including an opening portion of a crucible, and a filmthickness sensor, as shown in FIG. 9 as an example. Silicone resin 803may be filled in a space between the container 801 and the exteriorframe 802 in order to prevent the space. Further, there is provided afilter 801, because a certain quantity of evaporation material cannotpass through meshes of the filter provided in the container due to thesize thereof. By providing the filter inside the container 801, suchevaporation material can be made to come back inside the container, andbe sublimed again therein. Therefore, this makes it possible to controlfilm formation speed, to obtain uniform film thickness, and to vapordeposit uniformly without surface irregularity because the size of theevaporation material that is vapor deposited is the same. Of course,when it is possible to vapor deposit uniformly without the filter, thefilter is not required. The structure of the container is not limited tothe structure shown in FIG. 9. In addition, the container is formed of amaterial such as heat-resisting metal (Ti), sintered boron nitride (BN),a sintered compound of boron nitride (BN) and aluminum nitride (AlN),quartz, or graphite so as to be capable of withstanding hightemperature, high pressure, and low pressure.

Further, a plurality of evaporation source holders may be provided inone film formation chamber. A fabrication system according to thepresent invention comprising a load chamber, a transport chamberconnected with the load chamber, plural film formation chambersconnected with the transport chamber, and an installation chamberconnected with the film formation chambers;

in which each of the plural film formation chambers is connected with avacuum exhaust treatment chamber for allowing an inside of each of thefilm formation chambers to be in a vacuum state, comprise an alignmentmeans (a CCD camera and a stopper) for allowing positions of a mask anda substrate to be in registry with each other, a substrate holdingmeans, a plurality of rectangular evaporation source holders and a meansfor moving the evaporation source holders;

in which the evaporation source holders have containers, being arrangedin a longitudinal direction, in each of which an evaporation material issealed, a means for heating the containers; and

in which the installation chamber, being connected with a vacuum exhausttreatment chamber for allowing an inside of the installation chamber tobe in a vacuum state, and comprises a means for heating the containers,and a means for transporting the container into the evaporation sourceholders in the film formation chamber.

In the above-described structure, the substrate holding means isoverlapped with a region which becomes a terminal portion, a cuttingregion, or an end portion of the substrate with a mask being sandwichedtherebetween.

In the above-described structure, the substrate holding means and themask are bonded or welded with each other

In the above-described structure, means for moving the evaporationsource holders has a mechanism which moves the evaporation sourceholders in an X-direction at a given pitch and, further, a Y-directionat another given pitch.

In the above-described structure, a plurality of containers are disposedat equal intervals in the rectangular evaporation source holders.

The container itself may be elongated depending on the form of therectangular evaporation source holder instead of arranging the pluralcontainers.

Multiple crucibles can be arranged in two lines whereas crucibles arearranged in one line (1×7) as shown in FIG. 1. The timing for stating tomove the plural evaporation source holders may be either the time afterstopping the previous evaporation source holder or the time beforestopping the previous evaporation source holder. For example, differenttypes of materials can be continuously deposited on a substrate toimprove productivity in one chamber according to the followingprocedure; in case of using four evaporation source holders, cruciblesfilled with a hole transporting organic material are set in a firstevaporation source holder, crucibles filled with a light emittingorganic material are set in a second evaporation source holder,crucibles filled with an electron transporting organic material are setin a third evaporation source holder, and crucibles filled with ancathode buffer material are set in a fourth evaporation source holder.In the case of starting the next evaporation source holder movementbefore the solidification of a deposited film, a region whereevaporation materials are mixed (a mixed region) can be formed on aninterface between each film of an EL layer having a laminated structure.

A substrate and an evaporation source holder are caused relativemovement to each other, and thus it is not necessary to increase thedistance between the substrate and the evaporation source holder, andminiaturization of the system can thus be achieved. Further, the vapordeposition system is miniaturized, therefore the adhesion of sublimatedevaporation materials on interior walls in the film formation chambersor on adherence preventive shields can be reduced. The evaporationmaterials can thus be utilized without waste. In addition, it is notnecessary to rotate a substrate by the vapor deposition method accordingto the present invention, therefore a vapor deposition system capable ofhandling large area substrates can be provided. Further, it is alsopossible to form vapor deposited films uniformly, since the evaporationsource holders are moved in an X-direction and in a Y-direction withrespect to the substrate. Since a deposition mask is moved according tothe present invention, it is possible that inferior deposition caused bydeformation of masks due to heat can be minimized.

As shown in FIGS. 5A and 5B, the longitudinal direction of anevaporation source holder is set obliquely to a side of a substrate (anX-direction or a Y-direction) and then the evaporation source holder ismoved in the-X-direction or the Y-direction. A fabrication systemaccording to the present invention comprising a load chamber, atransport chamber connected with the load chamber, a plurality of filmformation chambers connected with the transport chamber, and aninstallation chamber connected with the film formation chamber;

in which each of the plurality of film formation chambers, beingconnected with a vacuum exhaust treatment chamber for allowing an insideof each of the film formation chambers to be in a vacuum state,comprises an alignment means for setting positions of a mask and asubstrate, a rectangular evaporation source holder, and a means formoving the evaporation source holder;

in which the evaporation source holder has containers, being disposed ina longitudinal direction, in each of which an evaporation material issealed, and means for heating the containers; and

in which the means for moving the evaporation source holder moves therectangular evaporation source holder with a longitudinal directionthereof being set obliquely to a side of the substrate in an X-directionor a Y-direction of the substrate.

In the above-described structure, the angle between the longitudinaldirection and the movement direction of the evaporation source holder isa certain angle Z (0°<Z°<90°).

Further, the substrate is set obliquely to the longitudinal direction ofthe rectangular evaporation source holder and the rectangularevaporation source holder is moved in the X-direction or theY-direction. A fabrication system according the present inventioncomprising a load chamber, a transport chamber connected with the loadchamber, a plurality of film formation chambers connected with thetransport chamber, and an installation chamber connected with the filmformation chambers;

in which each of the plurality of film formation chambers, beingconnected with a vacuum exhaust treatment chamber for allowing an insideof each of the film formation chambers to be in a vacuum state,comprises an alignment means for allowing positions of a mask and asubstrate to be in registry with each other, a rectangular evaporationsource holder, and a means for moving the evaporation source holder;

in which the evaporation source holder has containers, being arranged ina longitudinal direction, in each of which an evaporation material issealed, and a means for heating the containers; and

in which a side of the substrate is set obliquely to a direction inwhich the rectangular evaporation source holder is moved.

In the above-described structure, the mask and the evaporation sourceholder are set obliquely to the longitudinal direction of theevaporation source holder as well as the substrate. In addition, theangle between the longitudinal direction and the movement direction ofthe evaporation source holder is 90 degrees.

In the step of manufacturing an active matrix type light emittingapparatus, it is preferable that scanning direction of a laser beam usedin fabricating TFT is different from movement direction of theevaporation source holder. A structure of the present invention withrespect to manufacturing method of a light emitting apparatus is asfollows: A manufacturing method for a light emitting apparatus in whicha material containing an organic compound is vaporized from anevaporation source arranged facing a substrate provided with a TFTthereon, a film containing the organic compound is formed on a firstelectrode provided on the substrate and, then, a second electrode isformed on the film containing the organic compound, comprising the stepsof:

forming a semiconductor film on a substrate having an insulatingsurface;

irradiating a laser beam on the semiconductor film in a scanning manner;

forming a TFT in which the semiconductor film is allowed to be an activelayer;

forming a first electrode connected with the TFT;

forming a film containing an organic compound on the first electrodewhile a rectangular evaporation source holder is moved in a directiondifferent from a scanning direction of the laser beam; and

forming a second electrode on the film containing the organic compound.

Further, it is preferable that the direction perpendicular to scanningdirection of the laser beam be different from movement direction of theevaporation source holder. A structure of the present invention is asfollows; a manufacturing method for a light emitting apparatus in whicha material containing an organic compound is vapor deposited from anevaporation source arranged facing a substrate provided with a TFT and afirst electrode thereon, a film containing the organic compound isformed on the first electrode and, then, a second electrode is formed onthe film containing the organic compound, comprising the steps of:

forming a semiconductor film on a substrate having an insulatingsurface;

irradiating a laser beam on the semiconductor film in a scanning manner;

forming a TFT in which the semiconductor film is allowed to be an activelayer;

forming a first electrode connected with the TFT;

forming a film containing an organic compound on the first electrodewhile a rectangular evaporation source holder is moved in a directiondifferent from a direction perpendicular to a scanning direction of thelaser beam; and

forming a second electrode on a film containing the organic compound.

In the above-described structure, the laser beam is a laser beam emittedfrom one type of laser or a plurality of types of lasers selected fromamong;

a continuously oscillating laser or a pulse oscillating laser, saidcontinuously oscillating laser or said pulse oscillating laser being aYAG laser, a YVO₄ laser, a YLF laser, a YAlO₃ laser, a glass laser, aruby laser, an alexandrite laser, or a Ti: sapphire laser; or the laserbeam is a laser beam emitted from one type of laser or a plurality oftypes selected from among;

a continuously oscillating or a pulse oscillating, said continuouslyoscillating or said pulse oscillating being an excimer laser, an Arlaser, or a Kr laser.

The process of setting an EL material in a film formation chamber beforecarrying: out vapor deposition or the process of vapor deposition may beconsidered as the process that allows potentially impurities such asoxygen and moisture to penetrate into the EL material or a metalmaterial that will be vapor deposited.

Also, a container for preserving an EL material is generally abrown-capped glass bottle using a plastic cap. It can be thought thatthe bottle is not properly capped.

Conventionally, a predetermined quantity of an evaporation material isdisplaced from the container (the glass bottle) to another container(typically, a crucible or an evaporation boat) set opposed to asubstrate in a vapor deposition system when film formation is performedby vapor deposition. There is a risk of impurities being mixed into theevaporation materials during the materials are displaced to anothercontainer. That is, there is a danger that oxygen, moisture, or anotherimpurities are mixed into the materials, which are a cause ofdeterioration of an EL device.

The materials may be, for example, manually transferred from a glassbottle to a container in a pretreatment chamber using gloves, or thelike provided in a vapor deposition system. However, if gloves are setin the pretreatment chamber, the chamber cannot be vacuumized. Owing tothis, the materials should be transferred to another chamber in anatmospheric pressure. It is difficult to reduce moisture or oxygen asmuch as possible in the pretreatment chamber even in a nitrideatmosphere. Using a robot can be considered, however, it is difficult tomanufacture a robot that can treat powdery materials. Accordingly, it isdifficult to make a fabrication system a continuous closed systemcapable of preventing impurities being mixed into EL materials, in whichcomplete automation is made from the step of forming an EL layer on alower portion electrode to the step of forming an upper portionelectrode.

In accordance with the foregoing, the present invention provides afabrication system, in which an EL material or metal material isdirectly stored and hermetically sealed in the container that will setin a vapor depositing system without using the brown bottle glasstypically or the like that is used conventionally and carries out vapordeposition after transporting the materials, to prevent impurities frombeing mixed into high purity evaporation materials. For storing directlyEL evaporation materials into a container, sublimation purification ofthe EL evaporation materials may be conducted directly into a container(crucible), which will be set in a vapor deposition system, withoutdistributing obtained EL materials into separate containers. Accordingto the present invention, superpurification of evaporation materials canbe possible in the future. In addition, a metal material can be storeddirectly into a container, which will be set in a vapor depositionsystem, to be vapor deposited by resistance heating.

The form of the container will be described with reference to FIG. 8A. Asecond container has two portions of an upper portion (721 a) used fortransporting and a lower portion (721 b) and comprises fixing means 706for fixing a first container over top of the second container; a spring705 for applying pressure to the fixing means; a gas introduction port708 at the lower portion of the second container, which serves as a gaspathway for maintaining a reduced pressure in the second container; anO-ring that fixes the upper portion container 721 a and the lowerportion container 721 b; and a fastener 702. A first container 701, inwhich a purified evaporation material is filled, is set in the secondcontainer. In addition, the second container is preferable to be made ofa material containing stainless, and the first container is preferableto be made of a material containing titanium.

A purified material is filled in the first container 701 at the materialmanufacturer. The upper second container 721 a and the lower secondcontainer 721 b are fitted to each other using the O-ring and fixedusing the fastener 702. And the first container 701 is hermeticallysealed in the second container, then, the second container is reducedpressure and substituted for nitride atmosphere through the gasintroduction port 708, and then, the first container 701 is fixed byadjusting the spring 705 with the fixing means 706. In addition, adesiccant can be put into the second container. Consequently,maintaining a vacuum, low pressure, or nitride atmosphere in the secondcontainer can prevent even trace amount of oxygen or moisture fromadhering to an evaporation material.

The containers in this state are transferred to the light emittingapparatus manufacturer, and the first container 701 is directlytransported into a film formation chamber. Thereafter, the evaporationmaterial is sublimated by heat treatment and vapor deposited on asubstrate.

It is preferable that another parts, for example, a film-thicknessmonitor (such as a crystal oscillator), shutter, or the like betransported without exposing to air into a vapor deposition system.

It is preferable that the light emitting apparatus manufacturer ask thematerial manufacturer that makes or sells evaporation materials to storean evaporation material directly into the container that will be set inthe above-described described vapor deposition system. An attempt oftrying to decrease the mixed impurities by the light emitting apparatusmanufacturer in collaboration with the material manufacturer canmaintain the extremely high purity EL materials obtained by the materialmanufacturer. And, it is possible to carry out vapor deposition withoutdegrading the purity by the light emitting apparatus manufacturer.

Even if high purity EL materials are provided by the materialmanufacturer, there is a risk of impurities being mixed if the materialsshould be displaced to another container in a conventional manner by thelight emitting apparatus manufacturer. Consequently, the purity of ELmaterials cannot be kept high, and so there is a limitation of thepurity of EL materials.

In view of the foregoing, a crucible (in which an evaporation materialis filled in a sealed manner) that is sealed with vacuum in a containerwithout exposing to air is transported from the container into a filmformation chamber that is connected with an installation chamber toinstall the crucible without exposing to air. Then, the crucible istransported from the installation chamber using a transporting robot. Itis preferable that a vacuum exhausting means and a heater for heatingthe crucible be equipped with the installation chamber.

A mechanism of setting a first container 701 that has been transportedinto and vacuum sealed in the second container 721 a and 721 b isinstalled in the film formation chamber will be described with referenceto FIG. 8A and FIG. 8B.

FIG. 8A shows a turntable 713 in which the second container 721 a and721 b containing the first container is set on, a transport mechanismfor transporting the first container, and a cross sectional view of aninstallation chamber having a hauling up mechanism 711.

It is possible to control the atmosphere of the installation chamberthat is adjacent to the film formation chamber through the gasintroduction port by a controlling atmosphere means. Note that thetransport mechanism according to the present invention is not limited tothe structure in which the top portion of the first container issandwiched (picked up) as shown in FIG. 8B. The structure in which theside portion of the first container is sandwiched (picked up) may alsobe employed.

The second container is placed on the turntable 713 in the installationchamber in a state where the fastener 702 is released in theinstallation chamber. Since the inside of the installation chamber isunder vacuum, the container is as it is when the fastener 702 released.The pressure inside the installation chamber is then reduced by thecontrolling atmosphere means. The second container can be easily openedwhen the pressure inside the installation chamber becomes equal to thepressure inside the second container. The upper portion 721 a of thesecond container is then removed by using the hauling up mechanism 711,and the lower portion of the second container and the first container701 are moved by rotating the turntable 713 with a rotation axis 712.Then, the first container 701 is transported into the film formationchamber using the transport mechanism and set in an evaporation sourceholder (not shown).

Thereafter, the evaporation material is sublimated by a heater equippedwith the evaporation source holder and started to be deposited. When ashutter (not shown) installed with the evaporation source holder isopened, the sublimated evaporation material will scatter toward thesubstrate and deposit thereon, thus form a light emitting layer(including a hole transporting layer, a hole injection layer, anelectron transporting layer, and an electron injection layer).

The first container is removed from the evaporation source holder afterthe vapor deposition is completed, and transported into the installationchamber to be placed on the lower portion of the second lower container(not shown), which is set on the turntable, and then, hermeticallysealed by the upper container 721 a. Here, it is preferable that thefirst container, the upper container 721 a, and the lower container besealed together in the second container in this transported combination.In this state, inside the installation chamber is under the atmosphericpressure and the second container is transferred from the installationchamber with being fixed by the fastener 702 to the materialmanufacturer.

Also, a robot is installed in a pretreatment chamber (installationchamber) connected with the film formation chamber, and an evaporationsource can be moved into the pretreatment chamber and evaporationmaterial is set in the evaporation source. Therefore a fabricationsystem that has a structure in which the evaporation source moves intothe pretreatment chamber may be employed. Accordingly, the evaporationsource can be set with keeping film formation chambers clean.

Further, the present invention may reduce the processing time per singlesubstrate. As shown in FIG. 10, a multi-chamber fabrication system has aplurality of film formation chambers comprising a first film formationchamber for depositing onto a first substrate, and a second filmformation chamber for depositing onto a second substrate. A plurality oforganic compound layers are laminated in parallel in each film formationchamber, thus the processing time per single substrate is reduced. Thatis, the first substrate is taken out from a transport chamber and placedin the first film formation chamber, and vapor deposition on the firstsubstrate is carried out. During this time, the second substrate istaken out from the transport chamber and placed in the second filmformation chamber, and vapor deposition is also carried out on thesecond substrate.

Six film formation chambers are provided with a transport chamber 1004 aas shown in FIG. 10, and it is therefore possible to place sixsubstrates into the respective film formation chambers and carry outvapor deposition in order and in parallel. Further, vapor deposition canalso be carried out during maintenance of one or more film formationchamber by using the other film formation chambers, without temporarilystopping the production line.

An example of the procedure of vapor deposition for forming a layercontaining an organic compound according to the present invention is asfollows: Firstly, a container in which a crucible is sealed with vacuumis set and the inside of an installation chamber is evacuated, then, thecrucible is removed from the container. Secondly, although the crucibleis heated up to temperature T, it is necessary to be careful not tostart vapor deposition in the installation chamber by controlling thedegree of vacuum in the installation chamber to be lower than thatduring a vapor deposition. Thirdly, the heated crucible is transportedfrom the installation chamber into the film formation chamber. Thecrucible is set in an evaporation source holder that was heated inadvance in the film formation chamber, and the degree of vacuum isincreased, then, vapor deposition is started. The evaporation sourceholder can be moved in an X-direction or a Y-direction, and so the fixedsubstrate can be deposited uniformly. Heating the crucible in advancecan reduce the heating time.

In accordance with the present invention, substrate rotation is notnecessary, and therefore a vapor deposition system capable of handlinglarge surface area substrates can be provided. Further, a vapordeposition system capable of obtaining a uniform film in thickness, evenif the large surface area substrate is used, can be provided.

Furthermore, the distance between the substrate and the evaporationsource holder can be shortened in accordance with the present invention,and miniaturization of the vapor deposition system can be achieved. Thevapor deposition system becomes smaller, and therefore the amount ofsublimated evaporation materials that adhere to inner walls or adherencepreventive shields in film formation chambers is reduced, and theevaporation materials can be effectively utilized.

Further, the present invention can provide a fabrication system in whicha plurality of film formation chambers for performing vapor depositionprocess are arranged in succession. Throughput of the light emittingapparatus can be enhanced if parallel processing is performed in theplurality of film formation chambers.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a top view of a vapor deposition system according the presentinvention (Embodiment Mode 1);

FIG. 2 is a cross sectional view in which the periphery of the substrateis enlarged (Embodiment Mode 1);

FIGS. 3A to 3H show a structure of a substrate holding means (EmbodimentMode 2);

FIGS. 4A and 4B are a cross sectional view and a top view of a vapordeposition system according to the present invention (Embodiment Mode3);

FIGS. 5A and 5B show a movement direction of an evaporation sourceholder, respectively (Embodiment Mode 4);

FIGS. 6A to 6D show deposition masks (Embodiment Mode 1);

FIGS. 7A to 7C show deposition masks (Embodiment Mode 1);

FIGS. 8A and 8B show modes of a container to be transported;

FIG. 9 shows an evaporation source holder;

FIG. 10 shows a fabrication system (Embodiment 1);

FIGS. 11A to 11D show structures of devices (Embodiment 2);

FIGS. 12A and 12B show a light emitting apparatus (Embodiment 3);

FIGS. 13A and 13B show a light emitting apparatus (Embodiment 3);

FIGS. 14A to 14F show a connection between a TFT and a first electrodeand a shape of a partition wall (Embodiment 4);

FIGS. 15A to 15E show an example of electric appliances (Embodiment 5);

FIGS. 16A to 16C show an example of electric appliances (Embodiment 5);

FIGS. 17A and 17B show a module (Embodiment 6);

FIG. 18 shows a block diagram (Embodiment 6);

FIGS. 19A and 19B show a movement direction of an evaporation sourceholder (Embodiment 7);

FIGS. 20A and 20B show a circuit diagram of a pixel and a crosssectional view of a light emitting apparatus, respectively (Embodiment8).

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode 1

FIG. 1 is a top view showing a vapor deposition system according to thepresent invention. FIG. 1 shows the vapor deposition system in the midstof vapor deposition.

In FIG. 1, a film formation chamber 11 includes a substrate holdingmeans 12, an evaporation source holder 17 installed with an evaporationshutter, a mechanism for moving the evaporation source holder (notshown), and means for producing a low pressure atmosphere (vacuumexhausting means). Further, a large-size substrate 13 and a depositionmask 14(not shown) are installed in the film formation chamber 11.

Further, the substrate holding means 12 fixes by gravitation thedeposition mask 14 made of a metal and therefore fixes the substrate 13which is arranged over the deposition mask. Note that the substrateholding means 12 may be installed for a vacuum suction mechanism to fixthe mask. An example of adhesion or welding of the deposition mask tothe substrate holding means 12 is shown here. However, in order toprevent the deposition mask and the substrate holding means from fixingeach other, an insulating substance may be provided in the intersectionportion of the deposition mask and the substrate holding means eachother, or a shape of the substrate holding means may be arbitrarilychanged in order to be in point contact with the deposition mask.Further, although an example of installing both the substrate and thedeposition mask by the substrate holding means 12 is shown here, thesubstrate holding means and a deposition mask holding means may beindividually provided. In addition, the substrate holding means is fixedin the film formation chamber.

Further, it is preferable that the substrate holding means 12 be formedin a cutting region (a region to be scribe line) when multiface cuttingis executed because deposition cannot be carried out in a region that isoverlapping with the substrate holding means 12. Alternatively, thesubstrate holding means 12 may be formed in a manner of overlapping witha region to be a panel terminal portion. As shown in FIG. 1, thesubstrate holding means 12 is formed in the shape of a cross as seenfrom the upper surface, since FIG. 1 shows an example of forming fourpanels that are drawn in a dotted line within one substrate 13. However,the shape of the substrate holding means 12 is not limited to thisstructure, an asymmetric shape may be acceptable. Incidentally, althoughnot is shown clearly in the figure, the substrate holding means 12 isfixed in the film formation chamber. Note that masks are not shown inFIG. 1 for simplification.

Further, alignments of the deposition mask and the substrate may beconfirmed by using a CCD camera (not shown). The alignment control maybe carried out by installing alignment markers to the substrate and thedeposition mask respectively. A container filled with an evaporationmaterial 18 is installed in the evaporation source holder 17. The filmformation chamber 11 is vacuumed to degree of vacuum of 5×10⁻³ Torr(0.665 Pa) or lower, preferably, 10⁻⁴ through 10⁻⁶ Pa by the means forproducing the low pressure atmosphere.

Further, the evaporation material is previously sublimated (vaporized)by resistance heating in an installation chamber 33 b and when theevaporation speed is stable, the shutter 30 is opened to transport theevaporation source holder 17 to the inside of a film formation chamber11. The evaporation source holder 17 passes under the substrate 13. Anevaporated evaporation material is scattered in an upward direction andis selectively deposited on the substrate 13 by passing an openingportion provided at the deposition mask. Further, preferably, the filmformation speed, a movement speed of the evaporation source holder andopening and closing of the shutter are controlled by a microcomputer.The deposition rate of the evaporation source holder can be controlledby the movement speed of the evaporation source holder. In addition, ashutter may be provided in the evaporation source holder in order tocontrol the deposition.

In FIG. 1, multiple evaporation source holders 17 can stand by in theinstallation chambers 33 b and 33 c and the evaporation source holder 17can be moved sequentially to laminate multiple kinds of films.

Further, although not illustrated, deposition can be carried out whilemeasuring film thickness of a vapor deposited film by a film thicknessmonitor provided in the evaporation source holder, e.g. a quartzoscillator. When the film thickness of the vapor deposited film ismeasured by using the quartz oscillator, a change in mass of a filmdeposited to the quartz oscillator can be measured as a change in theresonance frequency.

In the vapor deposition system shown in FIG. 1, during the vapordeposition, a distance d of an interval between the substrate 13 and theevaporation source holder 17 can be reduced to, typically, 30 cm orless, preferably, 20 cm or less, more preferably, from 5 cm to 15 cm tothereby significantly enhance throughput and an efficiency of theevaporation material.

FIG. 2 is a cross sectional view showing a pattern diagram in which theperiphery of the substrate is enlarged. In FIG. 2, a rectangular shapeof an evaporation source holder 204 having six containers (crucibles)202 is shown. Film thickness monitors 201 are provided as necessary forthe six crucibles 202. Tilt regulating screws 205 are provided asnecessary in the same way as the film thickness monitors. The tiltregulating screw can tilt a heater 203 to the substrate 200. The heater203 is used as a heating means to carry out vapor deposition byresistance heating.

In the case of obtaining a full-color light emitting device in whichlayers containing an organic compound for emitting red (R), green (G)and blue (B) light are selectively laminated, three deposition masks areused to selectively deposit. FIGS. 6A to 6D show examples of variouslight emitting areas of a red light emitting device, a green lightemitting device and a blue light emitting device having differentluminous efficiency. Film thickness of a hole transporting or holeinjection layer, an electron transporting layer or electron injectionlayer are each changed and adjusted as necessary. Here is shown anexample: red light emitting area>blue light emitting area>green lightemitting area. However, the present invention is not limited thereto.

FIGS. 6A, 6B and 6C show a deposition mask for R, a deposition mask forB and a deposition mask for G, respectively.

In a first film formation chamber, a hole transporting or hole injectionlayer, a light emitting layer (R), an electron transporting layer orelectron injection layer are sequentially laminated by using thedeposition mask for R (FIG. 6A). In a second film formation chamber, ahole transporting or hole injection layer, a light emitting layer (G),an electron transporting layer or electron injection layer aresequentially laminated by using the deposition mask for G (FIG. 6C). Ina third film formation chamber, a hole transporting or hole injectionlayer, a light emitting layer (B), an electron transporting layer orelectron injection layer are sequentially laminated by using thedeposition mask for B (FIG. 6B). After that, a cathode is formed toobtain a full-color light emitting device. A part of the thus obtainedlight emitting area, that is, the light emitting area for eight pixels,is shown in FIG. 6D.

FIG. 7A to 7C show an example in which light emitting areas of a redlight emitting area, green light emitting area and blue light emittingarea are made equal to one another. When the light emitting areas arethe same, each of the shapes of the opening portions in the respectivemasks is the same but only alignment is different. Accordingly, it ispossible to form a deposition mask for R, a deposition mask for G and adeposition mask for B from one glass mask, and thus cost reduction canbe achieved. In particular, cost reduction for designing a depositionmask for a large-sized substrate is achieved. Further, as shown in FIG.7C, one mask is made by arranging four masks with alignment accuracy toreduce the cost considerably.

Three deposition masks for R, G and B shown in FIG. 7A are prepared.Only positions of the opening portions of the deposition masks aredifferent from each other. A part of the light emitting area that issequentially laminated by using the masks, in other words, the lightemitting area for eight pixels is shown in FIG. 7B.

The substrate 200 is aligned with masks 207 a and 207 b and a substrateholding means by CCD or the like. Here is shown an example of multifacecutting and the mask to be used in the present invention is a mask intowhich multiple small masks are unified into one mask with accuracybecause a large-sized mask for a large-sized substrate is veryexpensive. For example, in the case of forming four masks in alarge-sized substrate (600 cm×720 cm), the mask into which four masks(300 cm×360 cm per a mask) are unified as shown in FIG. 7C can be used.Cost reduction for designing a mask is achieved by aligning the fourmasks and adhering the four masks to each other. In order to unifyplural masks into one mask, multiple masks are welded or adhered to asubstrate holding means and then fixed. Further, a slide shutter (notshown) may be provided to control vapor deposition. For example, when anevaporation source holder is not under a substrate 200 since theevaporation source holder was moved, the shutter is closed to stop vapordeposition. The evaporation source holder 204 is moved with a movingmechanism 206 (typically, two-axis stage) in an X-direction or aY-direction on a two-dimensional surface in a film formation chamber. Inaddition, an example of an evaporation source holder having sixcontainers is shown in FIG. 2. However, the present invention is notlimited thereto and an evaporation source holder having 6 or morecontainers may be applicable.

As described above, by using the film formation chamber that has amechanism for transporting an evaporation source holder, it is notrequired to increase the distance between a substrate and theevaporation source holder, and so a vapor deposited film can beuniformly formed.

According to the present invention, the distance between a substrate andan evaporation source holder can be reduced, and miniaturization of avapor deposition system can be achieved. Further, the vapor depositionsystem becomes small, and therefore the adhesion of sublimatedevaporation materials on interior walls within the film formationchambers, or on adherence preventive shields can be reduced. Theevaporation materials can thus be utilized without waste. In addition,it is not necessary to rotate the substrates in the vapor depositionmethod of the present invention, and therefore a vapor deposition systemcapable of handling large surface area substrates can be provided.

By reducing the distance between a substrate and an evaporation sourceholder, a vapor deposited film can be formed to be a thin film underwell-controlled.

A crucible installed on a turntable 35 provided in the installationchamber 33 a is transported into the installation chamber 33 b bytransport mechanism 31 in order to install the crucible in anevaporation source holder. According to the present invention, acrucible (a crucible filled with evaporation material in a sealedmanner) sealed with vacuum in an container without being exposed to airis taken out of the container and can be transported from theinstallation chamber by a transporting robot without being exposed toair, since the installation chamber for installing a crucible to anevaporation source holder is connected with a film formation chamber.There is provided a vacuum exhausting means for each of installationchambers. Preferably, a heating means for heating a crucible is alsoprovided for each of the installation chambers.

A mechanism for installing a first container 701 which is hermeticallysealed in second containers 721 a and 721 b to be transformed into afilm formation chamber is described with reference to FIGS. 8A and 8B.

FIG. 8A shows a turntable 713 in which the second container 721 a and721 b containing the first container is set on, a transport mechanismfor transporting the first container, and a cross sectional view of aninstallation chamber having a hauling up mechanism 711.

It is possible to control the atmosphere of the installation chamberthat is adjacent to the film formation chamber through the gasintroduction port by a controlling atmosphere means. Note that thetransport mechanism according to the present invention is not limited tothe structure in which the top portion of the first container issandwiched (picked up) as shown in FIG. 8B. The structure in which theside portion of the first container is sandwiched (picked up) may alsobe employed.

The second container is placed on the turntable 713 in the installationchamber in a state where the fastener 702 is released in theinstallation chamber. Since the inside of the installation chamber isunder vacuum, the container is as it is when the fastener 702 released.The pressure inside the installation chamber is then reduced by thecontrolling atmosphere means. The second container can be easily openedwhen the pressure inside the installation chamber becomes equal to thepressure inside the second container. The upper portion 721 a of thesecond container is then removed by using the hauling up mechanism 711,and the lower portion of the second container and the first container701 are moved by rotating the turntable 713 with a rotation axis 712.Then, the first container 701 is transported into the film formationchamber using the transport mechanism and set in an evaporation sourceholder (not shown).

Thereafter, the evaporation material is sublimated by a heater equippedwith the evaporation source holder and started to be deposited.

The first container is removed from the evaporation source holder afterthe vapor deposition is completed, and transported into the installationchamber to be placed on the lower portion of the second container (notshown), which is set on the turntable, and then, hermetically sealed bythe upper container 721 a. Here, it is preferable that the firstcontainer, the upper container 721 a, and the lower container be sealedtogether in the second container in this transported combination. Inthis state, inside the installation chamber is under the atmosphericpressure and the second container is transferred from the installationchamber with being fixed by the fastener 702 to the materialmanufacturer.

Embodiment Mode 2

Next, a detailed description will be given of a structure of a substrateholding means according to the invention in reference to FIGS. 3A to 3H.

FIG. 3A shows a perspective view of a substrate holding means 301mounted with a substrate 303 and a mask 302 and FIG. 3B shows only thesubstrate holding means 301.

Further, FIG. 3C shows a cross sectional view of the substrate holdingmeans mounted with the substrate 303 and the mask 302 which isconstituted by a metal plate (representatively, Ti) having a height h of10 mm through 50 mm and a width w of 1 mm through 5 mm.

By the substrate holding means 301, bending of the substrate or bendingof the mask can be restrained.

Further, the shape of the substrate holding means 301 is not limited tothat shown by FIGS. 3A through 3C but may be constituted by a shape asshown in, for example, 3E.

FIG. 3E shows an example of providing portions that support end portionsof the substrate and by a substrate holding means 305, bending of thesubstrate 303 or bending of the mask 302 is restrained. Further, FIG. 3Eshows only the substrate holding means 305. Further, FIG. 3D shows aperspective view of the substrate holding means 305 mounted with thesubstrate 303 and the mask 302.

Further, in place of the shape of the substrate holding means, a shapeas shown in FIG. 3G may be employed. FIG. 3G shows an example ofproviding a mask frame 306 that supports end portions of the substrateand by the substrate holding means 307 and the mask frame 306, bendingof the substrate 303 or bending of the mask 302 is restrained. In thiscase, the substrate holding means 307 and the mask frame 306 may beformed by materials different from each other. Further, the mask frame306 is provided with a recess for fixing a position of the mask 302 asshown in FIG. 3H. The substrate holding means 307 may be integrated withthe mask frame 306.

Further, FIG. 3G shows the mask frame 306 and the substrate holdingmeans 307. Further, FIG. 3F shows a perspective view of the substrateholding means 305 and the mask frame 306 mounted with the substrate 303and the mask 302.

The present embodiment mode can freely be implemented with EmbodimentMode 1.

Embodiment Mode 3

An example of the film formation chamber having multiple evaporationsource holders is given in Embodiment Mode 1. In the other hand, inEmbodiment Mode 3, an example of a film formation chamber having oneevaporation source holder in FIGS. 4A-B.

FIGS. 4A and 4B show a vapor deposition system according to the presentinvention. FIG. 4A is a cross sectional view in a Y-direction (takenalong a dotted line A-A′) and FIG. 4B is a top view. FIGS. 4A and 4Bshow the vapor deposition system in the midst of vapor deposition.

In FIG. 4A, a film formation chamber 411 has a substrate holding means412, an evaporation source holder 417 provided with an evaporationshutter, a moving mechanism 420 for moving the evaporation sourceholder, and a means for producing the low pressure atmosphere. Alarge-sized substrate 413 and a deposition mask 414 are also installedin the film formation chamber 411. In addition, the deposition mask 414made of metal is fixed in the substrate holding means 412 by gravitationand the substrate 413 is also fixed over the mask 414. Note that avacuum suction mechanism may be provided for the substrate holding means412 in order to perform vacuum suction to fix the mask

It is preferable that deposits attached to the mask be vaporized to beevacuated to outside of a film formation chamber for cleaning thedeposits attached to the mask by generating plasma in the film formationchamber by a plasma generating means. For the purpose, a high frequencypower source is connected to the substrate holding means 412. Thus, itis preferable that the substrate holding means 412 be made from aconductive material (such as Ti). In the case of generating plasma, itis preferable to space a metal mask from the substrate holding means 412electrically for preventing electric field concentration.

Further, a moving pitch of the evaporation source holder 417 may beappropriately matched to an interval between insulating substances 410(it is also called bank or partition wall). Note that the insulatingsubstance 410 is arranged to cover end portions of a first electrode421.

An example of procedure for vapor deposition using a system shown inFIGS. 4A and 4B will be described below.

Firstly, a substrate transport shutter is opened to allow thelarge-sized substrate 413 to pass the substrate transport shutter andthe substrate is transported in the film formation chamber 411. Thesubstrate is installed over the substrate holding means 412 and thedeposition mask 414 by an alignment means. In the large-sized substrate,there have been provided a TFT, a first electrode 421 or the insulatingsubstance 410 in advance. The substrate 413 is transported in by facedown method. In addition, it is preferable that the film formationchamber be always under reduced pressure, e.g. its degree of vacuum is10⁻⁵ to 10⁻⁶ Pa, preferably.

Next, a second container 434 inside which a first container 436 issealed with vacuum is transported through a door of an installationchamber 433 and mounted on a turntable 435.

Thereafter, the pressure inside the installation chamber 433 is reducedto equal degree of vacuum or more to that inside the second container434 by a vacuum exhausting means. Then, only the second container 434 islifted up by a hauling up mechanism 432 to expose the first container436. The degree of vacuum of the film formation chamber is made equal tothat of the installation chamber 433. After opening a shutter 430, thefirst container 436 is transported by a transport mechanism 431 to beinstalled in the evaporation source holder 417. Note that the firstcontainer may be heated in the installation chamber 433 in advance,before the first container is transported by the transport mechanism431. The required number of the first containers is prepared in theevaporation source holder 417 and the shutter 430 is closed to startvapor deposition by resistance heating.

During the vapor deposition, the evaporation source holder 417 is movedin an X-direction or a Y-direction by the moving mechanism 420.

In the case of laminating different materials, the first container inwhich a material is finished being evaporated is transported back to theturntable and then another first container in which different materialis filled is installed in the evaporation source holder and thecontainer is moved in the X-direction or the Y-direction by movingmechanism 420.

After the vapor deposition is finished, the substrate transport shutteris opened in order that the substrate 413 is allowed to pass through theshutter and is transported out. Then, the first container is transportedback to the evaporation source holder by the transport mechanism 431.Next, if necessary, in order to clean the deposition mask or thesubstrate holding means, multiple types of gases or one type of gasselected from the group consisting of Ar, H, NF₃, or O can beintroduced, voltage is applied to the deposition mask with highfrequency power source, and plasma is generated.

The present embodiment mode can freely be combined with Embodiment Mode1 or Embodiment Mode 2.

Embodiment Mode 4

In this embodiment mode, an example in which a longitudinal direction ofan evaporation source holder is set obliquely to a side of a substrateand another example in which a direction of a substrate is set obliquelyto a movement direction of an evaporation source holder are describedwith reference to FIG. 5A and FIG. 5B.

In a case of the evaporation source holder in which a plurality ofcrucibles are aligned, since a frame (having a built-in heater, or abuilt-in cooling unit) in which a crucible is fit and fixed, a shutter,a film thickness monitor and the like are provided in a space betweenany two adjacent crucibles, there is a limit to narrowness of the spacebetween any two adjacent crucibles even when crucibles are disposed asclosely as possible to one another. Depending on an evaporation speed, amovement speed of the evaporation source holder, a size of a spacebetween the evaporation source holder and the substrate, and the like,when the holder is moved perpendicularly to a longitudinal direction ofthe holder, film forming is not sufficiently performed on a portioncorresponding to the space on the substrate, thereby being likely togenerate an uneven film thickness. Particularly when the movement speedof the evaporation source holder is fast and the space between thesubstrate and the evaporation source is narrow, the uneven filmthickness tends to be conspicuously generated. Further, a light-emissionregion becomes uneven due to the uneven film thickness, thereby beinglikely to generate a vertical or transversal streak.

Under these circumstances, according to the present invention, as shownin FIG. 5A as an example, vapor deposition is performed while theevaporation source holder is moved in a Y direction by keeping a statein which a longitudinal direction of the evaporation source holder 517is set to a direction at a given angle Z (0°<Z<90°) with an X direction(or Y direction) of the substrate 513. For example, in a case in whichthe longitudinal direction of the evaporation source holder is set atZ=45° with the X direction of the substrate and, then, the vapordeposition is performed while the evaporation source holder is moved inthe Y direction, assuming that the space between any two adjacentcrucibles is 1, the vapor-deposition is performed with the space of 1/√2to the X direction of the substrate. Therefore, the space (that in the Xdirection) between portions to be vapor-deposited becomes narrowwhereupon film thickness in a pixel region is allowed to be uniform.However, in this case, since width of the region to be vapor depositedbecomes narrow, the length of the evaporation source holder in alongitudinal direction and a number of crucibles may appropriately bedetermined such that a size of the evaporation source holder in thelongitudinal direction is allowed to be longer in correspondence to thatof the region to be vapor deposited.

On the other hand, an evaporation source holder 527 may be moved along apath 522 while, as shown in FIG. 5B as an example, a substrate 523itself is obliquely set, instead of setting the longitudinal directionof the evaporation source holder to be oblique to the X direction (or Ydirection) of the substrate. In this case, film forming can be performedon an entire surface of the substrate as a whole by allowing the lengthin the longitudinal direction of the evaporation source holder to belonger than the length of a diagonal line of the substrate. When thelength in the longitudinal direction of the evaporation source holder isshorter than that of a side of the substrate, film forming may beperformed by repeating scanning several times. Further, a plurality ofsame thin films may be laminated by repeatedly moving the evaporationsource holder along a same path.

Furthermore, at the time of forming a TFT, in a case in which a linearlaser beam (pulse oscillation type) is used, scanning is performed withthe laser beam in parallel with the X direction or the Y directionwhereupon, when an energy of the laser beam is fluctuated, a state ofcrystallization differs from one irradiation region to another and, as aresult, there is a risk of generating a streaked pattern (streakedpattern to be formed along a direction perpendicular to a scanningdirection 524 of the laser beam) in a light-emission region.

For example, a laser beam (XeCl: wavelength is 308 nm) is irradiated ona silicon film having an amorphous constitution or a silicon film havinga crystalline constitution in air or in an oxygen atmosphere and, then,the semiconductor film having a crystalline structure obtained isallowed to be an active layer of a TFT. In this case, a pulse laser beamhaving a repetition frequency of approximately from 10 Hz to 1000 Hz maybe used such that it is first condensed to from 100 mJ/cm² to 500 mJ/cm²by an optical system and, then, irradiated with an overlap ratio of from90% to 95% to scan a surface of the silicon film.

In order to obtain a crystal having a large grain diameter at the timewhen an amorphous semiconductor film is crystallized, it is preferableto apply any one of from a second harmonic to a fourth harmonic of afundamental wave by using a solid laser capable of continuouslyoscillating. As a representative example, a second harmonic (532 nm) ora third harmonic (355 nm) of Nd: YVO₄ laser (fundamental wave being 1064nm) may be applied. When a continuously oscillating laser is used, alaser beam emitted from the continuously oscillating YVO₄ laser havingan output power of 10 W is converted to a harmonic by a nonlinearoptical device. There is also a method in which a YVO₄ crystal and thenonlinear optical device are contained in a resonator to emit aharmonic. Preferably, the laser beam is formed by using an opticalsystem such that it becomes in a rectangular shape or an ellipticalshape when irradiated on an irradiating face and, then, irradiated on aprocessing object. On this occasion, an energy density of approximatelyfrom 0.01 MW/cm² to 100 MW/cm² (preferably from 0.1 MW/cm² to 10 MW/cm²)is necessary and a semiconductor film may be irradiated while it ismoved relatively to the laser beam at a speed of approximately from 10cm/s to 2000 cm/s.

When the laser beam (continuously oscillating type) is used at the timeof forming a TFT likewise, there is a risk of generating a streak (to beformed along a direction parallel to a scanning direction 524 of thelaser beam) in the light-emission region. Therefore, it is preferablethat a movement direction of the evaporation source holder in anelongated rectangular shape and a scanning direction of the laser beamare allowed to differ from each other and an angle between thesedirections is set to be in the range of more than 0° to less than 90°.In this manner, it becomes possible that a streaked pattern to be formedby the laser beam is less conspicuous and, also a streak to be generatedby a space between any two adjacent containers provided on theevaporation source holder or a streak to be generated by a difference ofthe movement speed of the evaporation source holder is less conspicuous.

In this embodiment mode, a case in which the evaporation source holderis moved while the substrate is fixed is illustrated. However, anothercase in which the substrate is moved while the evaporation source holderis fixed is permissible.

This embodiment mode can freely be combined with any one of EmbodimentModes 1 to 3.

Further, in the above description, a case in which three layers of ahole transporting layer, a light emitting layer, and an electrontransporting layer are laminated with one another that composes a layercontaining an organic compound to be provided between a cathode and ananode has been explained as a representative example; however, the layerstructure is not limited to a specific type and a structure in which ahole injection layer/a hole transporting layer/a light emitting layer/anelectron transporting layer, or a hole injection layer/a holetransporting layer/a light emitting layer/an electron transportinglayer/an electron injection layer are laminated with one another on theanode in the above-stated order, a double-layer structure or a monolayerstructure is permissible. In any of the above-described structures, afluorescent dye or the like may be doped in the light emitting layer.Further, examples of such light emitting layers include a light emittinglayer having a hole transport property and a light emitting layer havingan electron transport property. All of these layers may be formed byusing a low molecular-type material, or one layer or some layers thereofmay be formed by using a polymer-type material. Still further, in thisspecification of the present invention, all layers to be providedbetween the cathode and anode are generically referred to as a layercontaining an organic compound (EL layer). Therefore, all of theabove-described hole injection layer, hole transporting layer, lightemitting layer, electron transporting layer and electron injection layerare included in the EL layer. Furthermore, the layer containing theorganic compound (EL layer) may contain an inorganic material such assilicon.

The light emitting device (EL device) comprises a layer (hereinafterreferred to as “EL layer”) containing an organic compound that canobtain luminescence (Electro Luminescence) to be generated by beingapplied with an electric field, an anode, and a cathode. There are twotypes of luminescence to be obtained by the organic compound, that is,one type of luminescence (fluorescence) is generated at the time asinglet excited state undergoes a transmission to a ground state and theother type of luminescence (phosphorescence) is generated at the time atriplet excited state undergoes a transmission to the ground state. Alight emitting apparatus to be prepared according to the invention canbe applied to a case in which any one type of these luminescences isused.

Further, in the light emitting apparatus according to the presentinvention, a drive method for a screen display is not particularlylimited and, for example, any one of a point sequential drive method, aline sequential drive method and a face sequential drive method may beused. As a representative example, the line sequential drive method isadopted and a time division gradation drive method or an area gradationdrive method may appropriately be used. A video signal to be inputted toa source line of the light emitting apparatus may either be an analogsignal or a digital signal whereupon a driver circuit or the like mayappropriately be designed in accordance with the video signal.

Herein, a light emitting device comprising a cathode, an EL layer and ananode is denoted as the EL device whereupon there are two types ofsystems in such EL devices, that is, one system (simple matrix system)in which an EL layer is formed between two types of electrodes each in astripe state which are orthogonally provided to each other and the othersystem (active matrix system) in which an EL layer is formed between apixel electrode and a counter electrode which are connected to the TFTand are arrayed in a matrix state.

Further, not only the TFT in which a semiconductor film having acrystalline structure is allowed to bean active layer, but also an nchannel-type TFT in which an amorphous silicon is allowed to be anactive layer or the TFT in which a semi-amorphous semiconductor(hereinafter referred to also as “SAS”) is allowed to be an active layermay be used. By allowing the amorphous silicon film or thesemi-amorphous silicon film to be the active layer of the TFT, a numberof process steps at the time of producing the TFT can be reducedcompared with the TFT which uses a polycrystalline semiconductor filmwhereupon a yield rate of the light emitting apparatus is enhanced and,also, a production cost is suppressed.

The present invention which provides the above-described structure willbe described in detail with reference to embodiments to be illustratedbelow.

Embodiment 1

In the present embodiment, an example of a multi-chamber fabricationsystem in which an entire process from vapor deposition over a firstelectrode to sealing is automated is described with reference to FIG.10.

FIG. 10 is a multi-chamber fabrication system that includes: gates 100 ato 100 x; transport chambers 102, 1004 a, 108, 114, and 118; deliverychambers 105, 107, and 111; a load chamber 101; a first film formationchamber 1006R; a second film formation chamber 1006G; a third filmformation chamber 1006B; a fourth film formation chamber 1006R′; a fifthfilm formation chamber 1006G′; a sixth film formation chamber 1006B′;other film formation chambers 109, 110, 112, 113, and 132; installationchambers in each of which evaporation source is set; pretreatmentchambers 103 a and 103 b; a sealing chamber 116; a mask stock chamber124; a sealed substrate stock chamber 130; a cassette chambers 120 a and120 b, a tray loading stage 121; and a extraction chamber 119. In thetransport chamber 1004 a, a transport mechanism 104 b is provided fortransporting a substrate 104 c and in a similar way, respectivetransport mechanisms are also provided for other transport chambers.

Hereinafter, a process comprising a step of transporting a substrateover which an anode (first electrode), and an insulator (partition wall)covering an end portion of the anode have previously been provided, intoa fabrication system as shown in FIG. 10 and a step of fabricating alight emitting apparatus is described. When an active matrix type lightemitting apparatus is manufactured, a thin film transistor(current-controlling TFT) which is connected to the anode, a pluralityof other thin film transistors (for example, switching TFT) and a drivercircuit comprising a thin film transistor have previously been providedfor a substrate. Even when a passive matrix type light emittingapparatus is manufactured, the apparatus can be manufactured by usingthe fabrication system as shown in FIG. 10.

Firstly, the above-described substrate is set in the cassette chamber120 a or the cassette chamber 120 b. When the substrate is large in size(for example, 300 mm×360 mm), the substrate is set in the cassettechamber 120 b. When the substrate is of a normal size (for example, 127mm×127 mm), the substrate is set in the cassette chamber 120 a. Then,the thus-set substrate is transported into the tray loading stage 121where a plurality of substrates are set on a tray (for example, 300mm×360 mm).

The substrate (over which an anode and an insulator that covers an endportion of the anode are formed) which is set in either of the cassettechambers is transported into the transport chamber 118.

Before the substrate is set in either of the cassette chambers, in orderto reduce a spot defect, it is preferable that a surface of the firstelectrode (anode) be cleaned by using a porous sponge (for example,being made of polyvinyl alcohol (PVA), or nylon) impregnated with asurfactant (being alkalescent), thereby removing dust from the surfacethereof. As for a cleaning mechanism, a cleaning apparatus having a rollbrush (for example, made of PVA) which rotates around an axis lineparallel to a face of a substrate to contact the face of the substratemay be used, or another cleaning apparatus having a disk brush (forexample, made of PVA) which rotates around an axis line vertical to aface of a substrate to contact the face of the substrate may be used.Further, before a film containing an organic compound is formed, inorder to remove moisture or other gases contained in the substrate, itis preferable that annealing for degasification be performed on thesubstrate under vacuum. The substrate is transported into a bake chamber123 connected to the transport chamber 118, and then, such annealing maybe performed in the bake chamber 123.

Subsequently, the resultant substrate is transported from the transportchamber 118, which is provided with a substrate transport mechanism,into the load chamber 101. In the fabrication system according to thepresent embodiment, the load chamber 101 is provided with a substratereversal mechanism which can appropriately reverse the substrate. Theload chamber 101 is connected to a vacuum exhaust treatment chamber. Itis preferable that, after the load chamber 101 is evacuated to a vacuumstate, the load chamber 101 allows an inert gas to introduce thereinto,thereby the load chamber 101 is under an atmospheric pressure.

Subsequently, the substrate is transported into the transport chamber102 connected to the load chamber 101. It is preferable that, in orderto allow an inside of the transport chamber 102 to be free from moistureor oxygen as much as possible, the inside thereof have previously beenevacuated to a vacuum state so that the vacuum state is maintained.

Further, the vacuum exhaust treatment chamber is provided with amagnetically floating type turbo-molecular pump, a cryopump, or adrypump. In such structure, an ultimate vacuum degree in the transportchamber 102 connected to the load chamber 101 is allowed to be in therange of from 10⁻⁵ Pa to 10⁻⁶ Pa, and further, back diffusion ofimpurities from a pump side and an exhaust system can be controlled. Inorder to prevent the impurities from being introduced into the inside ofthe system, as for a gas to be introduced, an inert gas, for example, anitrogen gas, or a noble gas is used. Any one of these gases to beintroduced inside the system is highly purified by a gas purifier beforeit is introduced into inside the system, and then, used. Accordingly, itis necessary to provide the gas purifier so that the gas is firstlyhighly purified and then, introduced into inside the vapor depositionsystem. Under such structure, since oxygen, moisture, or any otherimpurities contained in the gas can be removed in advance, theseimpurities can be prevented from being introduced into inside theapparatus.

Further, when a film containing an organic compound formed in anunnecessary part is required to be removed, the resultant substrate istransported into the pretreatment chamber 103 a where a laminated layerof films containing the organic compound, then, may selectively beremoved. The pretreatment chamber 103 a is provided with a plasmagenerator in which a gas or a plurality of gases of at least one elementselected from the group consisting of Ar, H, F, and O are excited togenerate plasma, and then, dry etching is performed by thethus-generated plasma. Further, a UV irradiation mechanism may beprovided in the pretreatment chamber 103 a in order that an ultravioletray irradiation can be executed to perform an anode surface treatment.

In order to be free from shrinkage, it is preferable that vacuum heatingbe performed immediately before a film containing an organic compound isformed by vapor deposition. The resultant substrate is transported intothe pretreatment chamber 103 b where, in order to thoroughly removemoisture, or any other gases contained in the substrate, annealing fordegasification is performed on the substrate under vacuum (a degreethereof being 5×10⁻³ Torr (0.665 Pa) or less and, preferably, in therange of from 10⁻⁴ Torr to 10⁻⁶ Torr). In the pretreatment chamber 103b, a plate heater (sheath heater as a typical example) is used touniformly heat a plurality of substrates. Particularly, when an organicresin film is used as a material of an interlayer insulating film or apartition wall, an organic resin material tends to absorb moisturedepending on a type thereof. Since there is a risk of degasification, itis effective that, before a layer containing an organic compound isformed, the organic resin material is heated at a temperature in therange of from 100° C. to 250° C., preferably in the range of from 150°C. to 200° C., for example, for 30 minutes or more and then, thethus-heated organic resin material is left to stand in air forspontaneous cooling for 30 minutes to perform vacuum heating forremoving absorbed moisture.

Subsequently, after the above-described vacuum heating, the resultantsubstrate is transported from the transport chamber 102 to the deliverychamber 105 and then, the substrate is transported without being exposedto air from the delivery chamber 105 to the transport chamber 1004 a.

Thereafter, the substrate is appropriately transported into each of thefilm formation chambers 1006R, 1006G, and 1006B each of which isconnected to the transport chamber 1004 a. Over the thus-transportedsubstrate, a low molecular weight organic compound layer which includesa hole injection layer, a hole transporting layer, a light emittinglayer, an electron transporting layer, or an electron injection layer isappropriately formed.

Further, in the film formation chamber 112, the hole injection layercomprising a polymer material may be formed by ink-jetting or spincoating method. Still further, the substrate is vertically placed and,then, film-forming is performed on the substrate under vacuum byinkjetting. An aqueous solution of poly (ethylene dioxythiophene)/poly(styrenesulfonic acid) (referred to also as PEDOT/PSS), an aqueoussolution of polyaniline/camphor sulfonic acid (referred to also asPANI/CSA), PTPDES, Et-PTPDEK, PPBA or the like which acts as the holeinjection layer (anode buffer layer) may be applied over an entiresurface of the first electrode (anode) and baked. It is preferable thatsuch baking is performed in the bake chamber 123. When the holeinjection layer comprising a polymer material is formed by coating suchas spin coating, a degree of flatness is improved whereby coverage anduniformity in thickness of a film to be formed thereon are allowed to befavorable. Particularly, since film thickness of the light emittinglayer becomes uniform, a uniform luminescence can be obtained. In thiscase, it is preferable that, after the hole injection layer is formed bycoating, vacuum heating (100° C. to 200° C.) is performed on thethus-formed hole injection layer immediately before film-forming isperformed by vapor deposition. The vacuum heating may be performed inthe pretreatment chamber 103 b. For example, after a surface of thefirst electrode (anode) is cleaned by using a sponge, the substrate istransported into a cassette chamber, and then, the film formationchamber 112. After the aqueous solution of poly(ethylenedioxythiophene)/poly(styrene sulfonic acid) (PEDOT/PSS) is applied on anentire surface of the first electrode (anode) with a film thickness of60 nm by spin coating, the resultant substrate is transported into thebale chamber 123, pre-baked at 80° C. for 10 minutes, baked in a fullscale at 200° C. for one hour and, thereafter, transported into thepretreatment chamber 103 b. Furthermore, after vacuum heating (heatingat 170° C. for 30 minutes followed by cooling for 30 minutes) isperformed immediately before vapor deposition is performed, theresultant substrate transported sequentially into the film formationchambers 1006R, 1006G, and 1006B where respective light emitting layersmay be formed by vapor deposition without exposing the substrate to air.Particularly, in a case in which, when an ITO film is used as a materialfor the anode, a surface thereof is not uniform or a minute particle ispresent on the surface thereof, such detrimental influences can bedecreased by allowing a film thickness of PEDOT/PSS to be 30 nm or more.

Further, when PEDOT/PSS is applied on the ITO film, wettability thereofis not favorable; therefore, it is preferable that, after a PEDOT/PSSsolution is applied at a first time by using spin coating, the resultantPEDOT/PSS is rinsed with pure water, thereby enhancing the wettabilitythereof, and then, the PEDOT/PSS solution is applied at a second time byusing spin coating, and thereafter, baked to form a film favorable inuniformity. By rinsing the surface with pure water after a firstapplication is performed, effects not only of improving a quality of thesurface but also removing a minute particle or the like from the surfacecan be achieved.

Further, when a film of PEDOT/PSS is formed by using spin coating, thefilm is formed on an entire surface of the substrate. Therefore, thefilm formed on each of an end portion, a peripheral portion, a terminalportion, a connecting region between the cathode, a lower wiring and thelike are preferably removed and, in this case, such removal ispreferably performed in the pretreatment chamber 103 a by means of O₂ashing or the like.

Next, the film formation chambers 1006R, 1006G, and 1006B will bedescribed below.

Each of the film formation chambers 1006R, 1006G, and 1006B is providedwith a movable evaporation source holder. A plurality of such holdersare prepared, appropriately provided with a plurality of containers(crucibles) which have appropriately been filled with an EL material ina sealed manner, and set in the film formation chambers each. Thesubstrate is set in a face down manner, a position alignment of adeposition mask is performed by CCD or the like. Then, film-forming canselectively be performed by executing vapor deposition by resistanceheating. Further, the deposition mask is stored in a mask stock chamber124 and it is properly transported from there to a film formationchamber. Still further, the film formation chamber 132 is a vapor filmformation chamber in reserve for forming a layer containing an organiccompound or a metal material layer.

Setting the EL material in these film formation chambers is preferablyperformed by using a manufacturing system as described below. Namely, itis preferable that the film-forming is performed by using the ELmaterial which has previously been put in a container (crucible as atypical example) by a material manufacturer. Further, the setting ispreferably executed without exposing the EL material to air; therefore,it is preferable that, when the container, namely, crucible, isdelivered from the material manufacturer, the crucible is put in asecond container in a sealed manner and then introduced into the filmformation chamber as it is. Desirably, each installation chamber (notshown in the figure) which is provided by a vacuum exhausting means,connected to respective film formation chambers 1006R, 1006G, 1006B,1006R′, 1006G′, and 1006B′ are allowed to be in a vacuum state or aninert gas atmosphere, and under these circumstances the crucible istaken out of the second container to set the crucible in any one of thefilm formation chambers. Note that, examples of an installation chamberare shown in FIG. 1 and FIG. 4. In such manner, not only the cruciblebut also the EL material put in the crucible are prevented from beingcontaminated. It is, also, possible that the metal mask is stored insuch installation chamber.

By appropriately selecting the EL material to be set in respectivefilm-forming chambers 1006R, 1006G, 1006B, 1006R′, 1006G′ and 1006B′,the light emitting device which emits either mono-color (specificallywhite color) or full-color (specifically red, green, and blue colors)light as a whole body of the light emitting device can be manufactured.For example, when a green-color light emitting device is fabricated, ahole transporting layer or a hole injection layer, a light emittinglayer (G), and an electron transporting layer or an electron injectionlayer are laminated in this sequence in the film formation chamber 1006Gand then, a cathode is formed on the resultant laminated layer to obtainthe green-color light emitting device. For example, when a full-colorlight emitting device is fabricated, a hole transporting layer or a holeinjection layer, a light emitting layer (R), and an electrontransporting layer or an electron injection layer are laminated in thissequence in the film formation chamber 1006R by using a deposition maskprepared exclusively for R, and then, a hole transporting layer or ahole injection layer, a light emitting layer (G), and an electrontransporting layer or an electron injection layer are laminated in thissequence over the above-described-formed laminated layer in the filmformation chamber 1006G by using a deposition mask prepared exclusivelyfor G and, thereafter, a hole transporting layer or a hole injectionlayer, a light emitting layer (B), and an electron transporting layer oran electron injection layer are laminated in this sequence over theabove-described-formed laminated layer in the film formation chamber1006B by using a deposition mask prepared exclusively for B and,subsequently, a cathode is formed over the resultant laminated layer toobtain the full-color light emitting device.

Further, in a case of laminating light emitting layers having differentluminescent colors from one another, an organic compound layer whichshows a white-color luminescence is roughly classified into two types,namely, a 3 wavelength type which contains 3 primary colors of red,green and blue and a 2 wavelength type which utilizes a relationship ofcomplimentary colors of blue/yellow or bluish green/orange. It is alsopossible to fabricate a white-color light emitting device in one filmformation chamber. For example, when the white-color light emittingdevice is fabricated by using the 3 wavelength type, a plurality ofevaporation source holders are prepared in one film formation chamberand therein, an aromatic diamine (TPD) is filled in a first evaporationsource holder in a sealed manner, p-EtTAZ is similarly filled in asecond evaporation source holder, Alq3 is similarly filled in a thirdevaporation source holder, an EL material in which Alq3 is added withNile Red that is a red luminescent pigment is similarly filled in afourth evaporation source holder, and Alq3 is similarly filled in afifth evaporation source holder. Then, the first to fifth evaporationsource holders are set in respective film formation chambers.Thereafter, the first to fifth evaporation source holders start to movein sequence, and then vapor deposition is performed on the substrate ina lamination manner. Specifically, TPD is sublimated from the firstevaporation source holder by heating, thereby being deposited on anentire surface of the substrate. Thereafter, p-EtTAZ is sublimated fromthe second evaporation source holder, Alq3 is sublimated from the thirdevaporation source holder, Alq3:Nile Red is sublimated from the fourthevaporation source holder, and Alq3 is sublimated from the fifthevaporation source holder whereupon all these sublimated materials aredeposited on an entire surface of the substrate in order. Subsequently,when a cathode is formed on the resultant substrate, a white-color lightemitting device can be fabricated.

After the layers each containing the organic compound are appropriatelylaminated in accordance with the above-described process, the substrateis transported from the transport chamber 104 a to the delivery chamber107 and, further, from the delivery chamber 107 to the transport chamber108 without exposing the substrate to air.

Next, the substrate is transported into the film formation chamber 110by a transport mechanism provided in the transport chamber 108, andthen, a cathode is formed over the substrate in the film formationchamber 110. As for the cathode, a metal film (a film of an alloy of,for example, MgAg, MgIn, CaF₂, LiF, or CaN, a film formed by using anelement belonging to group I or II in the periodic table and aluminum bymeans of co-vapor deposition, or a laminate thereof) formed by utilizingresistance heating by means of vapor deposition is used. Further, thecathode may also be formed by sputtering.

When a top emission type light emitting apparatus is manufactured, it ispreferable that a cathode is transparent or translucent. It is alsopreferable that a thin film (1 nm to 10 nm) of the above-described metalfilm, or a laminate of the thin film (1 nm to 10 nm) of theabove-described metal film and a conductive transparent film is allowedto be the cathode. In this case, a film comprising the transparentconductive film (for example, indium oxide-tin oxide alloy (ITO), indiumoxide-zinc oxide alloy (In2O3—ZnO), or zinc oxide (ZnO)) may be formedin the film formation chamber 109 by sputtering method.

A light emitting device having a laminated layer is manufactured by theprocess described above.

Further, the substrate is transported into the film formation chamber113 connected to the transport chamber 108, and then, in the filmformation chamber 113, a protective film comprising a silicon nitridefilm or a silicon oxynitride film may be formed to seal it. A targetcomprising silicon or a target comprising silicon oxide, or a targetcomprising silicon nitride is provided in the film formation chamber113. For example, a silicon nitride film can be formed over the cathodeby using a target comprising silicon and by allowing the inside of thefilm formation chamber to be in a nitrogen gas atmosphere or anatmosphere containing nitrogen and argon gases. Further, a thin film(for example, DLC film, CN film, or amorphous carbon film) containingcarbon as a primary component may be formed as a protective film, andseparately, a film formation chamber using chemical vapor deposition(CVD) may be provided. A diamond-like carbon film (referred to also asDLC film) can be formed by at least one method selected from amongplasma CVD (as a typical example, RF plasma CVD, microwave CVD, electroncyclotron resonance (ECR) CVD, or hot-filament CVD), combustion-flame,sputtering, ion beam vapor deposition, and laser vapor deposition. Asfor reaction gases to be used in film-forming, a hydrogen gas, and atleast one of hydrocarbon-type gases (for example, CH₄, C₂H₂, and C₆H₆)are used. These gases are ionized by glow discharge, and after beingaccelerated in velocity, the resultant ions collides with a cathodewhich is applied with negative self-bias, thereby forming a film.Further, the CN film may be formed by using C₂H₄ gas and N₂ gas asreaction gas. Still further, the DLC film or the CN film is atransparent or translucent insulating film against visible light. Theterm “transparent against visible light” used herein is intended to meanthat a transmission factor of the visible light is in the range of from80% to 100% while the term “translucent against visible light” usedherein is intended to mean that a transmission factor of the visiblelight is in the range of from 50% to 80%.

In the present embodiment, a protective film that is a laminatecomprising a first inorganic insulating film, a stress relaxing film,and a second inorganic insulating film is formed over a cathode. Forexample, it is permissible that, after the cathode is formed, thesubstrate is transported into the film formation chamber 113 where thefirst inorganic insulating film is formed and, then, the resultantsubstrate is transported into the film formation chamber 132 where thestress relaxation layer (for example, a layer containing an organiccompound) having a hygroscopic property and transparency is formedthereon and, thereafter, the resultant substrate is transported back tothe film formation chamber 113 where the second inorganic insulatingfilm is formed thereon.

Next, the substrate over which a light emitting device is thus formed istransported from the transport chamber 108 to the delivery chamber 111without exposing the substrate to air, and then, from the deliverychamber 111 to the transport chamber 114. Subsequently, the substrateover which the light emitting device is formed is transported from thetransport chamber 114 to the sealing chamber 116.

A sealed substrate is set in a load chamber 117 from outside and readyto be processed. Further, it is preferable that, in order to removeimpurities such as moisture, the substrate has previously been subjectedto annealing under vacuum. When a sealing material is formed for bondingthe sealed substrate with the substrate over which the light emittingdevice is formed, the sealing material is formed in the sealing chamberand the sealed substrate over which the sealing material was formed istransported into the sealed substrate stock chamber 130. Further, adesiccant may be attached to the sealed substrate in the sealingchamber. Still further, in the present embodiment, an example in whichthe sealing material is formed over the sealed substrate is described;however, the present invention is by no means limited to the example andthe sealing material may be formed over the substrate over which thelight emitting device has previously been formed.

Next, the substrate and the sealed substrate are bonded to each other inthe sealing chamber 116, and then, the thus-bonded pair of substrates isirradiated with ultraviolet light by using an ultraviolet rayirradiation mechanism provided in the sealing chamber 116 to cure thesealing material. Further, in the present embodiment, an ultravioletray-curing type resin is used as the sealing material; however, noparticular limitation is put on the sealing material so long as it is anadhesive.

Subsequently, the thus-bonded pair of substrates is transported from thesealing chamber 116 to the transport chamber 114, and then, from thetransport chamber 114 to the extraction chamber 119 where the resultantsubstrate is taken out.

As described above, since the light emitting device is not exposed toair at all until it is sealed in a sealed space by using the fabricationsystem as shown in FIG. 10, a light emitting apparatus having highreliability can be manufactured. Further, although a vacuum state and anitrogen atmosphere under an atmospheric pressure are alternatelyrepeated in the transport chambers 114 and 118, it is preferable thatthe transport chambers 102, 1004 a, and 108 are consistently maintainedin a vacuum state.

Although not shown, a control device, which realizes automation bycontrolling a pathway along which the substrate is moved into eachtreatment chamber, is provided.

Further, in the fabrication system as shown in FIG. 10, it is alsopossible that a substrate, over which a transparent conductive film (ormetal film (TiN)) is provided as an anode is transported in, and after alayer containing an organic compound is formed over the substrate, atransparent or translucent cathode (for example, a laminate of a thinmetal film (for example, Al, or Ag) and a transparent conductive film)is formed over the resultant substrate to fabricate an top emission type(or top-bottom emission type) of light emitting device. The term “topemission type light emitting device” used herein is intended to mean andevice which takes out luminescence that is generated in the organiccompound layer by allowing it to pass through the cathode.

Further, in the fabrication system as shown in FIG. 10, it is alsopossible that a substrate, over which a transparent conductive film isprovided as an anode, is transported in, and, after a layer containingan organic compound is formed over the substrate, a cathode comprising ametal film (for example, Al, or Ag) is formed over the substrate tofabricate a bottom emission type light emitting device. The term “bottomemission type light emitting device” used herein is intended to mean andevice which takes out luminescence that is generated in the organiccompound layer from a transparent electrode, namely, an anode, in thedirection of TFT, and further, allows the luminescence to pass throughthe substrate.

An example of a system capable of manufacturing full color lightemitting devices in parallel is shown in FIG. 10. For example, vacuumheating is performed on substrates in the pretreatment chamber 103 b,and the substrates are then transported from the transport chamber 102to the transport chamber 1004 a via the delivery chamber 105. Films arelaminated on a first substrate through a pathway via the film formationchambers 1006R, 1006G, and 1006B, and films are laminated on a secondsubstrate through a pathway via the film formation chambers 1006R′,1006G′, and 1006B′. Throughput can thus be improved by carrying outvapor deposition on a plurality of substrates in parallel. A lightemitting apparatus can be completed by sealing after cathode formation.

Moreover, the first to third film formation chambers 1006R, 1006G and1006B can be used to sequentially perform vapor deposition, even whenthe fourth to sixth film formation chambers 1006R′, 1006G′ and 1006B′are under maintenance, although the number of substrates to be processedis reduced.

Further, hole transporting layers, light emitting layers, and electrontransporting layers of R, G and B colors each may also be laminated inthree different film formation chambers. Note that mask alignment isperformed respectively before carrying out vapor deposition, so that thefilms are only formed in predetermined regions. It is preferable to usedifferent masks for each of the different colors in order to preventcolor mixing, and three masks are necessary in this case. In the case ofprocessing plural substrates, for example, the following procedures maybe performed. A first substrate is placed in the first film formationchamber, and a layer that contains a red color light emitting organiccompound is formed. The first substrate is then removed, and placed nextin the second film formation chamber. A second substrate is placed inthe first film formation chamber while a layer that contains a greencolor light emitting organic compound is formed on the first substrate,and a layer that contains the red color light emitting organic compoundis formed on the second substrate. The first substrate is lastly placedin the third film formation chamber. The second substrate is placed inthe second film formation chamber, and a third substrate is placed inthe first film formation chamber, while a layer that contains a bluecolor light emitting organic compound is formed on the first substrate.Laminations may thus be performed sequentially.

Further, the hole transporting layers, the light emitting layers, andthe electron transporting layers of R, G, and B colors each may also belaminated in one film formation chamber. Three type of material layers,corresponding to R, G, and B, may be formed selectively by performingmask positioning through shifting the mask during mask alignment, if thehole transporting layers, the light emitting layers, and the electrontransporting layers of R, G, and B colors each are laminatedconsecutively in the one film formation chamber. The mask is shared inthis case, and only one mask is used.

The present embodiment can freely combined with any one of EmbodimentModes 1 to 4.

Embodiment 2

In this embodiment, described is an example of a device havingrespective functions of a plurality of various types of materials aswell as a function of performing division of functions of a laminatedstructure, in addition to a function of enhancing mobility of a carrierby relaxing an energy barrier in a film containing an organic compound.

In regard to relaxation of the energy barrier in the laminatedstructure, a technique of inserting a carrier injection layer is wellreferred to. That is, by inserting a material that relaxes the energybarrier present in an interface of the laminated structure having alarge energy barrier into the interface, a design for setting the energybarrier in a stepwise patter can be made. By making such design, aproperty of a carrier injection from an electrode can be enhanced tosurely reduce a drive voltage to certain extent. However, there is aproblem in that, by increasing the number of layers, the number oforganic interfaces is increased as well. It is considered that suchfeature is the reason why a single layer structure rather holds top dataof drive voltage/power efficiency. In other words, by overcoming theproblem, the laminated structure can reach the drive voltage/powerefficiency of the single layer structure, while maintaining a merit(capability of combinations of various types of materials free fromnecessity of a complicated design of molecules) of the laminatedstructure.

In this embodiment, when a film containing an organic compoundcomprising a plurality of functional regions is formed between a cathodeand an anode of a light emitting device, a structure having a mixedregion, which is different from a conventional laminated structure inwhich a distinct interface is present, comprising both a material whichconstitutes a first functional region and another material whichconstitutes a second functional region is formed between the firstfunctional region and the second functional region.

This embodiment also includes the case where a material that is capableof converting triplet excitation energy into luminescence is added tothe mixed region as a dopant. In the formation of the mixed region, themixed region may be formed to have a concentration gradient.

It is considered that, by applying such structure as described above,the energy barrier which is present between functional regions isreduced compared with the conventional structure, thereby enhancing thecarrier injection property. That is, the energy barrier betweenfunctional regions is relaxed by forming the mixed region and,accordingly, prevention of reduction of drive voltage and luminance canbe realized.

Therefore, in this embodiment, when a light emitting device comprisingat least a region (referred to as a first functional region) in which afirst organic compound can exhibit a function thereof and another region(referred to as a second functional region) in which a second organiccompound, being made from substance different from a substance whichconstitutes the first functional region, can exhibit a function thereof,and a light emitting apparatus comprising such light emitting device aremanufactured, a mixed region, containing the organic compound whichconstitutes the first functional region and another organic compoundwhich constitutes the second functional region, is prepared between thefirst functional region and the second functional region.

In the film formation system shown in FIG. 1, a plurality of rectangularevaporation source holders can be used. Accordingly, a film containingan organic compound having a plurality of functional regions can beformed in one film formation chamber, and a plurality of evaporationsource holders are provided in correspondence with the plurality offunctional regions in the film formation system.

Firstly, a first organic compound is vapor deposited by using a firstevaporation source holder. The first organic compound, which haspreviously been vaporized by resistance heating, is scattered in thedirection of a substrate by opening a first shutter at the time of vapordeposition. A first functional region 610 shown in FIG. 11B can beformed by repeatedly moving the first evaporation source holder.

Next, during a state in which the first organic compound is being vapordeposited, a second evaporation source holder is made to move to vapordeposit a second organic compound. Further, the second organic compoundwhich has also previously been vaporized by resistance heating isscattered in the direction of the substrate by opening a second shutterat the time of vapor deposition. A first mixed region 611 made with thefirst organic compound and the second organic compound can be formed.

The first evaporation source holder is stopped and the second organiccompound is vapor deposited on the substrate by repeatedly moving thesecond evaporation source holder. Thereby, a second functional region612 can also be formed.

Further, in this embodiment, a case in which the mixed region is formedby simultaneously moving multiple evaporation source holders in order tovapor deposit is described. However, it is also possible that the firstorganic compound is firstly vapor deposited and, then, it is alsopossible that a mixed region is formed between the first functionalregion and the second functional region by allowing the second organiccompound to be vapor deposited in the atmosphere in which the firstorganic compound is vapor deposited.

Subsequently, during a state in which the second organic compound isbeing vapor deposited, a third evaporation source holder is moved tovapor deposit a third organic compound. Further, the third organiccompound, which has also previously been vaporized by resistanceheating, is scattered in the direction of the substrate by opening athird shutter at the time of vapor deposition. A second mixed region 613made with the second organic compound and the third organic compound canbe formed.

Then, the second evaporation source holder is stopped and the thirdevaporation source holder is moved repeatedly to allow the third organiccompound to be vapor deposited and thus, a third functional region 614can also be formed.

Finally, a light emitting device is completed by forming a cathode onthe resultant substrate.

Furthermore, FIG. 11A shows an example of a light emitting device inwhich no mixed region is provided. The first functional region 610, thesecond functional region 612, and the third functional region 614 arevapor deposited sequentially and formed by using the system shown inFIGS. 4A and 4B, and then a cathode is formed to complete the lightemitting device.

FIG. 11C is an example of a light emitting device in which no mixedregion is provided. A first functional region 620 and a secondfunctional region 622 are vapor deposited sequentially and formed byusing the system shown in FIGS. 4A and 4B, and then a cathode is formedto complete the light emitting device.

Further, as for another light emitting device having a mixed region, asshown in FIG. 11D, after a first functional region 620 is formed byusing a first organic compound, a first mixed region 621 made with thefirst organic compound and a second organic compound is formed and then,the second functional region 622 is formed by using the second organiccompound. Thereafter, in the process of forming the second functionalregion 622, a third evaporation source holder is temporarily moved tosimultaneously vapor deposit a third organic compound, and thereby asecond mixed region 623 is formed.

Then, the third evaporation source holder is stopped and the secondevaporation source holder is repeatedly moved again to form the secondfunctional region 622. Thereafter, a cathode is formed on the resultantsubstrate, thereby fabricating a light emitting device.

Since a film containing an organic compound having a plurality offunctional regions can be formed in one film formation chamber, afunctional region interface is not contaminated by impurities and, also,a mixed region can be formed in a functional region interface.Therefore, a light emitting device having a plurality of functions canbe fabricated without having distinct laminated structure (namely,without a distinct organic interface).

Further, when the film formation system which can perform vacuumannealing before, while, or after a film-forming operation is executedis employed, a more fitting intermolecular state in the mixed region canbe established by performing vacuum annealing while the film-formingoperation is executed. Accordingly, it becomes possible to prevent thedrive voltage and luminance from being reduced. Further, impurities,such as oxygen and moisture, in the organic compound layer that has beenformed on the substrate are further removed by performing such annealing(evacuation) operation after the film is formed, and thereby the organiccompound layer having high density and high purity can be formed.

Further, this embodiment can freely be combined with any one ofEmbodiment Modes 1 to 4 and Embodiments 1.

Embodiment 3

In FIG. 12A, shown is an example of fabricating a light emittingapparatus (having an top emission structure) provided on a substratehaving an insulating surface with a light emitting device in which anorganic compound layer is allowed to be a light emitting layer.

FIG. 12A is a top view of the light emitting apparatus, while FIG. 12Bis a cross-sectional view taken along a line A-A′ in FIG. 12A. Referencenumeral 1101 indicated by a dotted line denotes a source signal linedriver circuit; reference numeral 1102 denotes a pixel portion; andreference numeral 1103 denotes a gate signal line driver circuit.Further, reference numeral 1104 denotes a transparent sealed substrate;reference numeral 1105 denotes a first sealing material; and referencenumeral 1107 denotes a transparent second sealing material which fillsan inside of an area surrounded by the first sealing material 1105. Thefirst sealing material 1105 contains a gap material for securing a spacebetween substrates.

Reference number 1108 denotes a wiring for transmitting a signal to beinputted to the source signal line driver circuit 1101 and the gatesignal line driver circuit 1103. The wiring 1108 receives a video signalor a clock signal from a flexible print circuit (FPC) 1109 which becomesan external input terminal. Although only the FPC 1109 is shown, aprinted wiring board (PWB) may be attached to the FPC 1109.

Subsequently, a cross sectional structure will be described withreference to FIG. 12B. A driver circuit and a pixel portion are formedon a substrate 1110, but the source signal line driver circuit 1101 asthe driver circuit and the pixel portion 1102 are shown in FIG. 12B.

In the source signal line driver circuit 1101, a CMOS circuit in whichan n-channel type TFT 1123 and a p-channel type TFT 1124 are combined isformed. The TFT that constitutes the driver circuit may be formed byCMOS circuit, a PMOS circuit or an NMOS circuit that are known in theart. In this embodiment, a driver-integrated type in which the drivercircuit is formed on the substrate is shown, but the driver-integratedtype may not necessarily be adopted. The driver circuit can also beformed outside instead of being formed on the substrate. A structure ofthe TFT using a polysilicon film as an active layer is not particularlylimited, therefore the structure may be either a structure of a top gatetype TFT or a structure of a bottom gate type TFT.

The pixel portion 1102 is formed with a plurality of pixels including aswitching TFT 1111, a current-controlling TFT 1112 and a first electrode(anode) 1113 that is electrically connected to a drain of thecurrent-controlling TFT 1112. The current-controlling TFT 1112 mayeither be an n-channel type TFT or a p-channel type TFT, but when it isconnected to the anode, it is preferably the p-channel type TFT. It isalso preferable that a storage capacitor (not shown) is appropriatelyprovided. An example in which only a cross-cross sectional structure ofone pixel is shown whereupon two TFTs are used in the pixel isillustrated, but three or more TFTs may appropriately be used per pixel.

Since it is constituted such that the first electrode 1113 is directlyconnected to the drain of the TFT, it is preferable that a lower layerof the first electrode 1113 is allowed to be a material layer which canhave an ohmic contact with the drain comprising silicon while anuppermost layer thereof which contacts a layer containing an organiccompound is allowed to be a material layer which has a large workfunction. For example, a three-layer structure made of a titaniumnitride film, a film containing aluminum as a primary component, and atitanium nitride film, can have a low resistance of wiring, and afavorable ohmic contact and, also, can function as an anode. Further, asthe first electrode 1113, a single layer of a titanium nitride film, achromium film, a tungsten film, a zinc film, a platinum film or thelike, or a laminated layer of three layers or more may be used.

An insulating substance 1114 (referred to as a bank, a partition wall, abarrier, a mound or the like) is formed on each end of the firstelectrode (anode) 1113. The insulating substance 1114 may be formed byeither an organic resin film or an insulating film comprising silicon.In this embodiment, as for the insulating substance 1114, an insulatingsubstance is formed in a shape as shown in FIG. 12B by using a positivetype photosensitive acrylic resin film.

For the purpose of enhancing a coverage effect, a curved surface havinga curvature is formed in an upper end portion or a lower end portion ofthe insulating substance 1114. For example, when the positive typephotosensitive acrylic resin is used as a material for the insulatingsubstance 1114, it is preferable that a curved surface having acurvature radius (0.2 μm to 3 μm) is provided only to the upper endportion of the insulating substance 1114. As for the insulatingsubstance 1114, either one of a negative type which becomes insoluble toan etchant by photosensitive light, and a positive type which becomessoluble to the etchant by light can be used.

Further, the insulating substance 1114 may be covered with a protectivefilm comprising an aluminum nitride film, an aluminum oxynitride film, athin film containing carbon as a primary component or a silicon nitridefilm.

A layer 1115 containing an organic compound is selectively formed on thefirst electrode (anode) 1113 by a vapor deposition method using adeposition mask or an inkjet method. Further, a second electrode(cathode) 1116 is formed on the layer containing the organic compound1115. As the cathode, a material having a small work function (forexample Al, Ag, Li, Ca, alloys of thereof, that is, MgAg, MgIn, AlLi,CaF2, or CaN) may be used. In this embodiment, a laminated layer of ametal thin film that is thin in thickness and a transparent conductivefilm (for example, an indium oxide-tin oxide alloy (ITO), an indiumoxide-zinc oxide alloy (In₂O₃—ZnO), or zinc oxide (ZnO)) is used as thesecond electrode (cathode) 1116 so that luminescence can pass throughthe layer. A light emitting device 1118 comprising the first electrode(anode) 1113, the layer containing the organic compound 1115, and thesecond electrode (cathode) 1116 is thus fabricated. In this embodiment,the light emitting device 1118 is an example of emitting white lightwhereupon a color filter (for the purpose of simplicity, an overcoatlayer is not shown) comprising a colored layer 1131 and a light blockinglayer (BM) 1132 is provided.

Further, when layers each containing an organic compound which canobtain R, G, and B luminescence, respectively, are selectively formed, afull-color display can be obtained without using a color filter.

A transparent protective layer 1117 is formed in order to seal the lightemitting device 1118. As for the transparent protective layer 1117, thetransparent protective laminated layer shown in Embodiment Mode 1 can beadopted. The transparent protective laminated layer comprises alaminated layer comprising a first inorganic insulating film, a stressrelaxation film and a second inorganic insulating film. As the firstinorganic insulating films and the second inorganic insulating film, asilicon nitride film, silicon oxide film, a silicon oxynitride film(SiNO film (component ratio: N>O), or SiON film (component ratio: N<O)),or a thin film containing carbon as a primary component (e.g., DLC film,or CN film) which are obtained by a sputtering method or a CVD methodcan be used. These inorganic insulating films each have a high blockingeffect against moisture; however, as film thickness thereof isincreased, a film stress is increased, as a result, a partial of thefilm is easily peeled off or a whole thereof is easily removed.Nevertheless, stress can be relaxed and, also, moisture can be absorbedby sandwiching the stress relaxation film between the first inorganicinsulating film and the second inorganic insulating film. Even when aminute hole (pinhole or the like) is formed in the first inorganicinsulating film by an undefined reason, the minute hole can be filled bythe stress relaxation film and, further, by providing the secondinorganic insulating film thereover, an extremely high blocking effectagainst moisture or oxygen can be attained.

As for materials for the stress relaxation film, a material which hassmaller stress than the inorganic insulating films and has a hygroscopicproperty is preferable. Further, it is desired that the material have atranslucent property in addition to the above-described-describedproperties is desirable. Further, as for the stress relaxation film, amaterial film containing an organic compound such as α-NPD(4,4′-bis[N-(naphthyl)-N-phenyl-amino]biphenyl), BCP (bathocuproin),MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, andAlq₃ (a tris-8-quinolinolate aluminum complex) may be used. Thesematerial films each have a hygroscopic property whereupon, when thematerial films become thin in thickness, they become nearly transparent.Since MgO, SrO₂, and SrO each have a hygroscopic property andtranslucency and can be made into a thin film by a vapor depositionmethod, any one of these oxides can be used as the stress relaxationfilm. In this embodiment, using a silicon target, a film formed in anatmosphere containing a nitrogen gas and an argon gas, that is, asilicon nitride film having a high blocking effect against impuritiessuch as moisture and an alkali metal is used as the first inorganicinsulating film or the second inorganic insulating film, and a thin filmof Alq₃ formed by a vapor deposition method is used as the stressrelaxation film. Further, in order to allow luminescence to penetratethe transparent protective laminated layer, it is preferable that anentire film thickness of the transparent protective laminated layer isformed as thin as possible.

Further, in order to seal the light emitting device 1118, the sealedsubstrate 1104 is bonded thereto by using the first sealing material1105 and the second sealing material 1107 in an inert gas atmosphere. Asfor the first sealing material 1105 and the second sealing material1107, it is preferable that an epoxy type resin is used. It is alsopreferable that the first sealing material 1105 and the second sealingmaterial 1107 be a material which allows moisture or oxygen to penetratethereinto as little as possible.

Further, in this embodiment, a plastic substrate made offiberglass-reinforced plastics (FRP), polyvinylfluoride (PVF), Mylar,polyester, an acrylic resin, or the like, in addition to a glasssubstrate or a quartz substrate can be used as a material whichconstitutes the sealed substrate 1104. After the sealed substrate 1104was bonded by using the first sealing material 1105 and the secondsealing material 1107, it is possible to perform sealing by a thirdsealing material so that a side face (exposed face) is covered.

By sealing the light emitting device by the transparent protective layer1117, the first sealing material 1105, and the second sealing material1107 in a manner as described above, the light emitting device canthoroughly be shielded from outside, and thereby a substance, such asmoisture and oxygen, which deteriorates the organic compound layer canbe prevented from entering from outside. Accordingly, a light emittingapparatus having high reliability can be obtained.

Further, as for the first electrode 1113, a both top and bottom emissiontype light emitting apparatus can be prepared by using a transparentconductive film.

In this embodiment, an example of a structure (hereinafter referred toas “top emission structure”) in which a layer containing an organiccompound is formed on an anode and a cathode that is a transparentelectrode is formed on the layer containing an organic compound, isdescribed above. On the other hand, a structure having a light emittingapparatus (hereinafter referred to as “bottom emission structure”) inwhich a layer containing an organic compound is formed on an anode and acathode is formed on the organic compound layer and allowingluminescence generated in a layer containing the organic compound toemit from the anode, which is the transparent electrode, toward TFT mayalso be adopted.

An example of a light emitting apparatus having a bottom emissionstructure is shown in FIG. 13A and FIG. 13B.

FIG. 13A is a top view of the light emitting apparatus, while FIG. 13Bis a cross-sectional view taken along a line A-A′ in FIG. 13A. Referencenumeral 1201 indicated by a doted line denotes a source signal linedriver circuit; reference numeral 1202 denotes a pixel portion; andreference numeral 1203 denotes a gate signal line driver circuit.Further, reference numeral 1204 denotes a sealed substrate; referencenumeral 1205 denotes a sealing material in which a gap material forsecuring a sealed space is contained; and an inside of an areasurrounded by the sealing material 1205 is filled with an inert gas(typically, a nitrogen gas). A trace quantity of moisture present in thespace inside the area surrounded by the sealing material 1205 is removedby a desiccant 1207 and, accordingly, the space is sufficiently dry.

Reference number 1208 denotes a wiring for transmitting a signal to beinputted to the source signal line driver circuit 1201 and the gatesignal line driver circuit 1203. The wiring 1208 receives a video signalor a clock signal from a flexible print circuit (FPC) 1209 which becomesan external input terminal.

Subsequently, a cross sectional structure will be described withreference to FIG. 13B. A driver circuit and a pixel portion are formedover a substrate 1210, but the pixel portion 1202 and the source signalline driver circuit 1201 as the driver circuit are shown in FIG. 13B. Inthe source signal line driver circuit 1201, a CMOS circuit in which ann-channel type TFT 1223 and a p-channel type TFT 1224 are combined isformed.

The pixel portion 1202 is formed with a plurality of pixels including aswitching TFT 1211, a current-controlling TFT 1212 and a first electrode(anode) 1213, comprising a transparent conductive film, that iselectrically connected to a drain of the current-controlling TFT 1212.

In this embodiment, arranged is a structure in which the first electrode1213 is formed in a manner that a part thereof is overlapped with aconnecting electrode and the first electrode 1213 is electricallyconnected to a drain region of TFT via a connecting electrode. It ispreferable that the first electrode 1213 have transparency and comprisean electrically conductive film having a large work function (forexample, an indium oxide-tin oxide alloy (ITO), an indium oxide-zincoxide alloy (In₂O₃—ZnO), or zinc oxide (ZnO)).

An insulating substance 1214 (referred to as a bank, a partition wall, abarrier, a mound or the like) is formed on each end of the firstelectrode (anode) 1213. For the purpose of enhancing a coverage effect,a curved surface having a curvature is formed in an upper end portion ora lower end portion of the insulating substance 1214. Further, theinsulating substance 1214 may be covered with a protective filmcomprising an aluminum nitride film, an aluminum oxynitride film, a thinfilm containing carbon as a primary component or a silicon nitride film.

A layer containing an organic compound 1215 is selectively formed on thefirst electrode (anode) 1213 by a vapor deposition method using adeposition mask or an inkjet method. Further, a second electrode(cathode) 1216 is formed on the layer containing the organic compound1215. As for the cathode, a material having a small work function (forexample Al, Ag, Li, Ca, alloys of thereof, that is, MgAg, MgIn, AlLi,CaF₂, or CaN) may be used. In such a manner as described above, a lightemitting device 1218 comprising the first electrode (anode) 1213, thelayer containing the organic compound 1215, and the second electrode(cathode) 1216 is fabricated. The light emitting device 1218 emits lightin a direction which an arrow in FIG. 13A and FIG. 13B indicates. Thelight emitting device 1218 in this embodiment is one type of lightemitting apparatuses which can obtain mono-color luminescence of R, G,or B. Three light emitting devices in which layers containing an organiccompound that is capable of obtaining R, G, or B luminescence areselectively formed are made to a full-color light emitting device.

Further, a protective layer 1217 is formed in order to seal the lightemitting device 1218. As for the protective layer 1217, the protectivelaminate shown in Embodiment Mode 2 can be adopted. The protectivelaminate comprises a laminated layer that includes a first inorganicinsulating film, a stress relaxation film and a second inorganicinsulating film.

Further, in order to seal the light emitting device 1218, the sealedsubstrate 1204 is bonded thereto by using the sealing material 1205 inan inert gas atmosphere. A recess portion has previously been formed onthe sealed substrate 1204 by a sand-blast method or the like and then, adesiccant 1207 is bonded to the thus-formed recess portion. As for thesealing material 1205, it is preferable that an epoxy type resin isused. It is also preferable that the sealing material 1205 is a materialthat allows moisture or oxygen to penetrate thereinto as little aspossible.

Further, in this embodiment, a plastic substrate made offiberglass-reinforced plastics (FRP), polyvinyl fluoride (PVF), Mylar,polyester, an acrylic resin or the like, in addition to a metalsubstrate, a glass substrate or a quartz substrate can be used as amaterial which constitutes the sealed substrate 1204 having the recessportion. It is also possible to perform sealing by using a metal can inwhich a desiccant is bonded to the inside thereof.

Further, this embodiment can freely be combined with any one ofEmbodiment Modes 1 to 4 and Embodiments 1 and 2.

Embodiment 4

In this embodiment, a cross sectional structure of one pixel,particularly states and manners of connections in regard to a lightemitting device and a TFT, and a shape of a partition wall to beprovided between pixels will be described.

In FIG. 14A, reference numeral 40 denotes a substrate, 41 denotes apartition wall (referred to also as “mound”), 42 denotes an insulatingfilm, 43 denotes a first electrode (anode), 44 denotes a layercontaining an organic compound, 45 denotes a second electrode (cathode),and 46 denotes a TFT.

In the TFT reference numerals 46, 46 a denotes a channel forming region,46 b and 46 c each denote a source region or a drain region, 46 ddenotes a gate electrode, 46 e and 46 f each denote a source electrodeor a drain electrode. Although a top-gate type TFT is described in thisembodiment, the TFT is not limited to a particular type and a reversestagger type TFT or a regular stagger type TFT is permissible. Further,46 f denotes the electrode which is connected with TFT 46 by allowing 46f to be in partial contact with the first electrode 43 in an overlappingmanner.

In FIG. 14B, a cross sectional structure which is partially differentfrom that shown in FIG. 14A is shown.

In FIG. 14B, the overlapping manner between the first electrode 43 andthe electrode 46 f is different from that as shown in FIG. 14A; namely,the first electrode 43 is patterned and, then, the electrode 46 f isformed such that it is partially lapped over the thus-patterned firstelectrode 43 to allow the electrode 46 f to be connected with the TFT.

In FIG. 14C, a cross sectional structure which is partially differentfrom that shown in FIG. 14A is shown.

In FIG. 14C, an additional interlayer insulating layer is furtherprovided whereupon the first electrode is connected with the electrodeof the TFT via a contact hole.

Further, a cross sectional shape of the partition wall 41 may be of atapered one as shown in FIG. 14D. Such shape can be obtained by firstexposing a resist to light by using a photolithography method and, then,etching a non-photosensitive organic resin or an inorganic insulatingfilm.

Still further, when a positive-type photosensitive organic resin isused, as shown in FIG. 14E, a shape having a curved surface on a top endthereof can be obtained.

On the contrary, when a negative-type photosensitive resin is used, asshown in FIG. 14F, a shape having a curved surface on each of top andbottom ends thereof can be obtained.

This embodiment can freely be combined with any one of Embodiment Modes1 to 4 and Embodiments 1 to 3.

Embodiment 5

Various modules (active matrix EL module) can be completed byimplementing the present invention. Thus, all electronic appliances inwhich such modules are incorporated can be completed.

Such electronic appliances are as follows: video cameras, digitalcameras, head mounted displays (goggle type displays), car navigationsystems, projectors, car stereos, personal computers, portableinformation terminals (mobile computers, mobile phones or electronicbooks etc.) etc. Practical examples thereof are shown in FIGS. 15A to16C.

FIG. 15A is a personal computer which includes a main body 2001, animage input section 2002, a display portion 2003, a keyboard 2004 andthe like.

FIG. 15B is a video camera which includes a main body 2101, a displayportion 2102, a voice input section 2103, operation switches 2104, abattery 2105, an image receiving section 2106 and the like.

FIG. 15C is a game machine which includes a main body 2201, operationswitches 2204, a display portion 2205 and the like.

FIG. 15D is a player using a recording medium which records a program(hereinafter, referred to as a recording medium), including a main body2401, a display portion 2402, a speaker portion 2403, a recording medium2404, an operation switch 2405 and the like. In addition, the playerusing a DVD (Digital Versatile Disc), a CD or the like as a recordingmedium can be used for enjoying music, cinema, game, Internet or thelike.

FIG. 15E is a digital camera which includes a main body 2501, a displayportion 2502, a view finder 2503, operation switches 2504, and an imagereceiving section (not shown in the drawing) etc.

FIG. 16A is a mobile phone which includes a main body 2901, a voiceoutput section 2902, a voice input section 2903, a display portion 2904,operation switches 2905, an antenna 2906, an image input section (CCD,image sensor, etc.) 2907 and the like.

FIG. 16B is a portable book (electronic book) which includes a main body3001, display portions 3002 and 3003, a recording medium 3004, operationswitches 3005, an antenna 3006 and the like.

FIG. 16C is a display unit which includes a main body 3101, a supportingportion 3102, a display portion 3103 and the like.

In addition, the display shown in FIG. 16C can have a small, medium orlarge size display portion, for example a size of 5 to 20 inches.Further, in manufacturing the displays portion with such sizes, it ispreferable to use a substrate with one meter on a side to mass-producedisplay portions.

As described above, the applicable range of the present invention is sowide that the invention can be applied to manufacturing of electronicappliances of various fields. Note that the electronic appliances ofthis embodiment can be achieved by utilizing any combination ofstructures in Embodiment Mode 1 to 4 and Embodiment 1 to 4.

Embodiment 6

The electronic appliances represented in Embodiment Mode 5 includes apanel in which light emitting device is sealed, a module in which thepanel is provided with IC including a controller and a circuit such as apower source circuit. The module and the panel are both corresponding toone mode of the light emitting apparatus. In the present invention, aspecific structure of the module will be described.

FIG. 17A shows an appearance of a module in which a panel 1800 isprovided with a controller 1801 and a power source circuit 1802. Thepanel 1800 is provided with a pixel portion 1803 in which a lightemitting device is provided in each pixel, a gate line driver circuit1804 for selecting a pixel in the pixel portion 1803, and a source linedriver circuit 1805 for supplying a video signal to the selected pixel.

The controller 1801 and the power source circuit 1802 are provided in aprinted substrate 1806, various kinds of signals and power supplyvoltage outputted from the controller 1801 or the power source circuit1802 are supplied via FPC 1807 to the pixel portion 1803, the gate linedriver circuit 1804, and the source line driver circuit 1805 in thepanel 1800.

The power supply voltage and the various kinds of signals are suppliedto the printed circuit 1806 via an interface (I/F) 1808 in which aplurality of input terminals are arranged.

Although the printed substrate 1806 is mounted on the panel 1800 withFPC in this embodiment, the present invention is not limited to thisstructure. The controller 1801 and the power source circuit 1802 may beprovided directly on the panel 1800 with COG (Chip on Class) method.

Further, in the printed circuit 1806, there is a case that a capacitanceformed between leading wirings and a resistance of a wiring itself causea noise to a power supply voltage or a signal, or make a rise of asignal dull. Therefore, various kinds of devices such as a capacitor anda buffer may be provided in order to prevent the noise from being causedto the power supply voltage or a signal and the dull rise of the signalin the printed substrate 1806.

FIG. 17B is a block diagram showing a structure of the printed substrate1806. Various kinds of signals and power supply voltage supplied to theinterface 1808 are supplied to the controller 1801 and the power sourcecircuit 1802.

The controller 1801 has an A/D converter 1809, a phase locked loop (PLL)1810, control-signal generating portion 1811, and SRAMs (Static RandomAccess Memory) 1812 and 1813. Although the SRAM is used in thisembodiment, instead of the SRAM, SDRAM can be used and DRAM (DynamicRandom Access Memory) can also be used if it is possible to write in andread out data at high speed.

Video signals supplied via the interface 1808 are subjected to aparallel-serial conversion in the A/D converter 1809 to be input intothe control-signal generating portion 1811 as video signalscorresponding to respective colors of R, G, and B. Further, based onvarious kinds of signals supplied via the interface 1808, Hsync signal,Vsync signal, clock signal CLK, and volts alternating current (AC cont)are generated in the A/D converter 1809 to be input into the controlsignal generating portion 1811.

The phase-locked loop 1810 has a function to synchronize the phase ofthe frequency of each signal supplied through the interface 1808 withthe phase of the operating frequency of the control-signal generatingportion 1811. The operating frequency of the control-signal generatingportion 1811 is not necessarily the same as the frequency of each signalsupplied through the interface 1808, but the operating frequency of thecontrol-signal generating portion 1811 and the frequency of each signalsupplied through the interface 1808 are adjusted in order to synchronizeone another in the phase-locked loop 1810.

The video signal inputted to the control-signal generating portion 1811is once written into and held on the SRAM 1812, 1813. The control-signalgenerating portion 1811 reads out the video signals corresponding to allthe pixels, one bit by one bit, from among all the bits of video signalsheld on the SRAM 1812 and supplies them to the source line drivercircuit 1805 in the panel 1800.

The control-signal generating portion 1811 supplies the informationconcerning a period during which the light emitting apparatus of eachbit causes light emission, to the scanning-line driver circuit 1804 inthe panel 1800.

The power source circuit 1802 supplies a predetermined power supplyvoltage to the source line driver circuit 1805, scanning-line drivercircuit 1804, and pixel portion 1803 in the panel 1800.

Explanation is now made on the configuration of the power source circuit1802 with reference to FIG. 18. The power source circuit 1802 of thisembodiment comprises a switching regulator 1854 using four switchingregulator controls 1860 and a series regulator 1855.

Generally, the switching regulator that is small in size and light inweight as compared to the series regulator can raise voltage and invertpolarities besides voltage reduction. On the other hand, the seriesregulator that is used only in voltage reduction has well output voltageaccuracy as compared to the switching regulator, hardly causing ripplesor noises. The power source circuit 1802 of this embodiment mode uses acombination of the both.

The switching regulator 1854 shown in FIG. 18 has a switching regulatorcontrol (SWR) 1860, an attenuator (ATT) 1861, a transformer (T) 1862, aninductor (L) 1863, a reference power supply (Vref) 1864, an oscillatorcircuit (OSC) 1865, a diode 1866, a bipolar transistor 1867, a varistor1868 and a capacitor 1869.

When a voltage of an external Li-ion battery (3.6 V) or the like istransformed in the switching regulator 1854, generated are a powersupply voltage to be supplied to a cathode and a power supply voltage tobe supplied to the switching regulator 1854.

The series regulator 1855 has a band-gap circuit (BG) 1870, an amplifier1871, operational amplifiers 1872, a current source 1873, a varistor1874 and a bipolar transistor 1875, and is supplied with a power supplyvoltage generated at the switching regulator 1854.

In the series regulator 1855, a power supply voltage generated by theswitching regulator 1854 is used to generate a direct current powersupply voltage to be supplied to a wiring (current supply line) forsupplying current to the anodes of various-color of light emittingdevices according to a constant voltage generated by the band-gapcircuit 1870.

Incidentally, the current source 1873 is used for a drive method towrite video signal current to a pixel. In this case, the currentgenerated by the current source 1873 is supplied to the source linedriver circuit 1805 in the panel 1800. In the case of a drive method towrite the video signal voltage to a pixel, the current source 1873 isnot always required.

A switching regulator, an OSC, an amplifier and an operation amplifierare formed using TFT.

The structure of this embodiment may be freely combined with any of thestructures of Embodiment Mode 1 to 4 and Embodiment 1 to 5.

Embodiment 7

In this embodiment, an example in which an evaporation source holder ismoved perpendicular or in parallel to a side of a substrate whileallowing a longitudinal direction and a movement direction of theevaporation source holder to be same with each other will be describedwith reference to FIGS. 19A and 19B.

In FIG. 19A, reference numeral 1912 denotes a holder moving path,reference numeral 1913 denotes a large-size substrate, and referencenumeral 1917 denotes an evaporation source holder. By allowing thelongitudinal direction and the moving direction of the evaporationsource holder to be same with each other, regions (in stripes) to bevapor-deposited are finely overlapped with each other to aim for auniform film thickness on an entire substrate. A vapor deposition methodas shown in FIG. 19A is appropriate to a case in which a same materialis prepared in all containers and a large film thickness is obtained ina short period of time.

Further, an even number of crucibles is prepared and, as shown in FIG.19B as an example, an evaporation material may be aimed for becomingfine particles by abutting with each other such that each center of theevaporation source holder 1917 is crossed over. On this occasion, apoint in which such crossover is performed is situated in a spacebetween a mask (and a substrate) and the container.

This embodiment can freely be combined with any one of Embodiment Modes1 to 3 and Embodiments 1 to 5.

Embodiment 8

FIG. 20A shows an embodiment mode of a circuit diagram of a pixel whileFIG. 20B shows a cross sectional diagram of a TFT to be used in a pixelportion. Reference numeral 901 corresponds to a switching TFT forcontrolling an input of a video signal to a pixel while 902 correspondsto a driving TFT for controlling a supply of electric current to a lightemitting device 903. Concretely, a drain electric current of the drivingTFT 902 is controlled in accordance with a potential of the video signalinputted in the pixel via the switching TFT 901 whereupon the drainelectric current is supplied to the light emitting device 903. Referencenumeral 904 corresponds to a capacitor element (hereinafter referred toalso as “capacitor”) for holding a gate-source voltage (hereinafterreferred to also as “gate voltage”) of the driving TFT at the time whenthe switching TFT 901 is in a turning-off state; however, the capacitorelement 904 is not necessarily provided.

In FIG. 20A, specifically, a gate electrode of the switching TFT 901 isconnected with a scanning line G, and one of the source region and thedrain region is connected with a signal line S while the other isconnected with a gate of the driving TFT 902. One of the source regionand the drain region of the driving TFT 902 is connected with a powersupply line V while the other is connected with a pixel electrode 905 ofthe light emitting device 903. One of two electrodes of the capacitorelement 904 is connected with a gate electrode of the driving TFT 902while the other is connected with the power supply line V.

In FIGS. 20A and 20B, formed is a multi-gate structure in which theswitching TFT 901 is serially connected and a plurality of TFTsconnected with the gate electrode share a first semiconductor filmthereamong. By the multi-gate structure, an electric current of theswitching TFT 901 in a turning-off state can be reduced. Concretely, inFIGS. 20A and 20B, although the switching TFT 901 has a structure inwhich two TFTs are serially connected, a multi-gate structure in whichthree or more of TPTs are serially connected and, further, the gateelectrode is connected is also permissible. The switching TFT is notnecessarily of a multi-gate structure and may be a TFT having anordinary single-gate structure in which the gate electrode and thechannel forming region are each in a singular number.

Tufts 901 and 902 are of a reverse stagger type (hereinafter referred toalso as “bottom-gate type”). An active layer of the TFT employs anamorphous semiconductor or a semi-amorphous semiconductor. When theactive layer of the TFT is allowed to be the semi-amorphoussemiconductor, not only a pixel portion but also the driver circuit canbe formed on a same substrate and, since an n type is higher in mobilitythan a p type, the n type is appropriate for the driver circuit;however, each TFT may either be of n type or p type. Even when the TFThaving either one of such polarities is employed, it is desirable thatall of the TFTs formed on a same substrate have a same polarity in orderto suppress production steps to a small number.

The driving TFT 902 of the pixel portion comprises a gate electrode 920formed on a substrate 900, a gate insulating film 911 covering the gateelectrode 920, and a first semiconductor film 922 formed by asemi-amorphous semiconductor film and lapped over the gate electrode 920with the gate insulating film 911 sandwiched therebetween. The drivingTFT 902 further comprises a pair of second semiconductor films 923functioning as a source region or a drain region, and a thirdsemiconductor film 924 provided between the first semiconductor film 922and the second semiconductor film 923.

The second semiconductor film 923 is formed by an amorphoussemiconductor film or a semi-amorphous semiconductor film and is addedwith an impurity which imparts the semiconductor film with oneconductivity type. A pair of second semiconductor films 923 is providedon opposite sides of a channel forming region of the first semiconductorfilm 922 such that they face each other.

The third semiconductor film 924 is formed by an amorphous semiconductorfilm or a semi-amorphous semiconductor film, has a same conductivitytype as that of the second semiconductor film 923 and has a propertythat electric conductivity thereof is lower than that of the secondsemiconductor film 923. Since the third semiconductor film 924 functionsas an LDD region, it diffuses an electric field which concentrates on anend portion of the second semiconductor film 923 which functions as thedrain region whereupon a hot-carrier effect can be prevented. Althoughthe third semiconductor film 924 is not necessarily provided, suchprovision thereof enhances pressure resistance and reliability of theTFT. Further, when the driving TFT 902 is of an n type, an n-typeconductivity type can be obtained without particularly adding theimpurity which imparts the n-type at the time when the thirdsemiconductor film 924 is formed. Therefore, when the TFT 902 is of then type, the impurity of n type is not necessarily added to the thirdsemiconductor film 924. However, an impurity which imparts electricconductivity of a p type is added to the first semiconductor film onwhich a channel is formed to control the conductivity type thereof so asto be as near to a I type as possible.

A wiring 925 is formed such that it is in contact with a pair of thethird semiconductor films 924.

Further, a first passivation film 940 and a second passivation film 941each comprising an insulating film are formed such that they cover theTFTs 901 and 902, and the wiring 925. Such passivation films which coverthe TFTs 901 and 902 are not limited to a structure made of two layersand may either have a structure made of a monolayer or three or morelayers. For example, the first passivation film 940 can be formed byusing silicon nitride while the second passivation film 941 can beformed by using silicon oxynitride. By forming such passivation film byusing silicon nitride or silicon oxynitride, the TFTs 901 and 902 can beprevented from being deteriorated by an influence of moisture or oxygen.

TFTs 901 and 902 and the wiring 925 are covered by a flat interlayerinsulating film 905. As for the flat interlayer insulating film 905, afilm which has been prepared by performing a flattening treatment on aninsulating film by means of a PCVD method, or a SiOx film having analkyl group which has been prepared by using a siloxane-type polymer bymeans of a coating method may be used.

Thereafter, a contact hole which reaches the wiring 925 is formed and,then, a pixel electrode 930 which is electrically connected with one endof the wiring 925 is formed.

Subsequently, an insulating substance 929 (hereinafter referred to alsoas “bank”, “partition wall”, “barrier”, or “mound”) which covers an endportion of the pixel electrode 930 is formed. As for the insulatingsubstance 929, an inorganic material (for example, silicon oxide,silicon nitride, or silicon oxide nitride), a photosensitive ornon-photosensitive organic material (for example, polyimide, acryliccompound, polyamide, polyimidoamide, resist, or benzocyclobutene), alaminate thereof, or the like can be used. On this occasion, thephotosensitive organic resin covered with a silicon nitride film isused. For example, when a positive-type photosensitive acrylic compoundis used as an organic resin material, it is preferable to allow only atop end of the insulating substance to have a curved surface having acurvature radius. As for the insulating substance, any one of a negativetype which becomes insoluble to an etchant by a photosensitive light anda positive type which becomes soluble to the etchant by a light can beused. Further, a SiOx film having an alkyl group which can be obtainedby using a cyclohexane-type polymer by means of a coating method may beapplied also to the insulating substance 929.

Thereafter, an electric field light emitting layer 931 is formed suchthat it lies on top of the pixel electrode 930 of the light emittingdevice 903. The electric field light emitting layer 931 has a laminatestructure in which at least one layer is selectively formed by using avapor deposition system as shown in FIG. 1. By using the vapordeposition system (an example thereof being shown in FIG. 1) appropriatefor a mass-production steps while using a large-area substrate, waste ofthe evaporation material is suppressed, thereby allowing an overallproduction cost of the light emitting device to be reduced.

Thereafter, a counter electrode 932 is formed such that it is in contactwith the electric field light emitting layer 931. The light emittingdevice 903 comprises a cathode and an anode whereupon one of them isused as a pixel electrode while the other one is used as a counterelectrode.

When a vapor deposition system is used as the pixel electrode 930, lightemitted from the electric field light emitting layer 931 passes throughthe substrate 900 and emerges therefrom in a direction of an arrow asshown in FIG. 20B.

In this embodiment, since the third semiconductor film comprising achannel forming region is formed by using the semi-amorphoussemiconductor, the TFT having a higher mobility than the TFT which usesan amorphous semiconductor film can be obtained; hence, the drivercircuit and the pixel portion can be formed on a same substrate.

This embodiment can freely be combined with Embodiment mode 1 orEmbodiment 5.

The present invention can provide a fabrication system by which acontainer in which a evaporation material is filled in a sealed manneror a film thickness monitor can transported from an installation chamberconnected to a vapor deposition system without being exposed to air.According to the present invention, evaporation materials are treatedmore easily and mixing of impurities into the evaporation materials canbe prevented. By using such fabrication system, it is possible toinstall a container that is sealed by a material manufacturer inside avapor deposition system without exposing it to air, and thus, adhesionof moisture or oxygen to evaporation materials can be prevented. Thiscan provide much higher degree of purity for a light emitting devicefrom here on.

When an amorphous semiconductor film or semi amorphous semiconductorfilm is used as an active layer of a TFT, a uniform film thickness canbe obtained on a whole face of a large area substrate. Manufacturingcost of a light emitting apparatus can be reduced and, at the same time,a vapor deposition system in which loss of evaporation material isreduced can be provided.

1. A manufacturing method for a light emitting device comprising thesteps of: forming a semiconductor film over a substrate having aninsulating surface; irradiating a laser beam over said semiconductorfilm in a scanning manner; forming a TFT comprising said semiconductorfilm; forming a first electrode connected with said TFT; moving anevaporation source holder provided with said organic compound in adirection different from a direction perpendicular to a scanningdirection of said laser beam to form a film containing an organiccompound over said first electrode; and forming said second electrodeover a film containing said organic compound, wherein an angle betweenthe moving direction of the evaporation source holder and the scanningdirection of the laser beam is in a range from more than 0 degree toless than 90 degrees.
 2. The manufacturing method for a light emittingdevice according to claim 1, wherein the evaporation source holder isrectangular.
 3. The manufacturing method for a light emitting deviceaccording to claim 1, wherein said laser is one of a continuouslyoscillating laser and a pulse oscillation laser, and said laser is oneor more kinds of members selected from the group consisting of YAGlaser, YVO₄ laser, YLF laser, YAlO₃ laser, Y₂O₃ laser, glass laser, rubylaser, alexandrite laser and Ti: sapphire laser.
 4. The manufacturingmethod for a light emitting device according to claim 1, wherein saidlaser is one of a continuously oscillating laser and a pulse oscillationlaser, and said laser is one or more kinds of members selected from thegroup consisting of excimer laser, Ar laser and Kr laser.
 5. Amanufacturing method for a light emitting device comprising the stepsof: forming a semiconductor film over a substrate having an insulatingsurface; irradiating a laser beam over said semiconductor film in ascanning manner; forming a TFT comprising said semiconductor film;forming a first electrode connected with said TFT; moving an evaporationsource holder provided with said organic compound in a directiondifferent from a scanning direction of the laser beam to form a filmcontaining an organic compound over said first electrode; and formingsaid second electrode over a film containing said organic compound,wherein an angle between the moving direction of the evaporation sourceholder and the scanning direction of the laser beam is in a range frommore than 0 degree to less than 90 degrees.
 6. The manufacturing methodfor a light emitting device according to claim 5, wherein theevaporation source holder is rectangular.
 7. The manufacturing methodfor a light emitting device according to claim 5, wherein said laser isone of a continuously oscillating laser and a pulse oscillation laser,and said laser is one or more kinds of members selected from the groupconsisting of YAG laser, YVO₄ laser, YLF laser, YAlO₃ laser, Y₂O₃ laser,glass laser, ruby laser, alexandrite laser and Ti: sapphire laser. 8.The manufacturing method for a light emitting device according to claim5, wherein said laser is one of a continuously oscillating laser and apulse oscillation laser, and said laser is one or more kinds of membersselected from the group consisting of excimer laser, Ar laser and Krlaser.